Abstract: Social media applications are increasingly being used in our everyday communications. These applications utilise end-to-end encryption mechanisms which make them suitable tools for criminals to exchange messages. These messages are preserved in the volatile memory until the device is restarted. Therefore, volatile forensics has become an important branch of digital forensics. In this study, the WormHex tool was developed to inspect the memory dump files for Windows and Mac based workstations. The tool supports digital investigators by enabling them to extract valuable data written in Arabic and English through web-based WhatsApp and Twitter applications. The results confirm that social media applications write their data into the memory, regardless of the operating system running the application, with there being no major differences between Windows and Mac.
Abstract: In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias.
Abstract: Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
Abstract: Memristor is also known as the fourth fundamental
passive circuit element. When current flows in one direction through
the device, the electrical resistance increases and when current flows
in the opposite direction, the resistance decreases. When the current
is stopped, the component retains the last resistance that it had, and
when the flow of charge starts again, the resistance of the circuit will
be what it was when it was last active. It behaves as a nonlinear
resistor with memory. Recently memristors have generated wide
research interest and have found many applications. In this paper we
survey the various applications of memristors which include non
volatile memory, nanoelectronic memories, computer logic,
neuromorphic computer architectures low power remote sensing
applications, crossbar latches as transistor replacements, analog
computations and switches.