Abstract: Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.
Abstract: Alternative electrode materials for optoelectronic devices have been widely investigated in recent years. Since indium tin oxide (ITO) is the most preferred transparent conductive electrode, producing ITO films by simple and cost-effective solution-based techniques with enhanced optical and electrical properties has great importance. In this study, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) incorporated into the ITO structure to increase electrical conductivity, mechanical strength, and chemical stability. Carbon nanotubes (CNTs) were firstly functionalized by acid treatment (HNO3:H2SO4), and the thermal resistance of CNTs after functionalization was determined by thermogravimetric analysis (TGA). Thin films were then prepared by spin coating technique and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), four-point probe measurement system and UV-Vis spectrophotometer. The effects of process parameters were compared for ITO, MWCNT-ITO, and SWCNT-ITO films. Two factors including CNT concentration and annealing temperature were considered. The UV-Vis measurements demonstrated that the transmittance of ITO films was 83.58% at 550 nm, which was decreased depending on the concentration of CNT dopant. On the other hand, both CNT dopants provided an enhancement in the crystalline structure and electrical conductivity. Due to compatible diameter and better dispersibility of SWCNTs in the ITO solution, the best result in terms of electrical conductivity was obtained by SWCNT-ITO films with the 0.1 g/L SWCNT dopant concentration and heat-treatment at 550 °C for 1 hour.
Abstract: Maximal radar wave absorbing cannot be achieved by shaping alone. We have to focus on the parameters of absorbing materials such as permittivity, permeability, and thickness so that best absorbing according to our necessity can happen. The real and imaginary parts of the relative complex permittivity (εr' and εr") and permeability (µr' and µr") were obtained by simulation. The microwave absorbing property of carbon and Ni(C) is simulated in this study by MATLAB software; the simulation was in the frequency range between 2 to 12 GHz for carbon black (C), and carbon coated nickel (Ni(C)) with different thicknesses. In fact, we draw reflection loss (RL) for C and Ni-C via frequency. We have compared their absorption for 3-mm thickness and predicted for other thicknesses by using of electromagnetic wave transmission theory. The results showed that reflection loss position changes in low frequency with increasing of thickness. We found out that, in all cases, using nanocomposites as absorbance cannot get better results relative to pure nanoparticles. The frequency where absorption is maximum can determine the best choice between nanocomposites and pure nanoparticles. Also, we could find an optimal thickness for long wavelength absorbing in order to utilize them in protecting shields and covering.
Abstract: We investigated magneto-optical Kerr effect in transparent region of implanted ferrite-garnet films for the (YBiCa)3(FeGe)5O12. The implantation process was carried out at room temperature by Ne+ ions with energy of 100 KeV and with various doses (0.5-2.5) 1014 ion/cm2. We discovered that slight deviation of the plane of external alternating magnetic field from plane of sample leads to appearance intensive magneto-optical maximum in transparent region of garnet films ħω=0.5-2.0 eV. In the proceeding, we have also found that the deviation of polarization plane from P- component of incident light leads to the appearance of the similar magneto-optical effects in this region. The research of magnetization processes in transparent region of garnet films showed that the formation of magneto-optical effects in region ħω=0.5-2.3 eV has a rather complex character.
Abstract: CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.
Abstract: Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.
Abstract: The thermoelectric properties of nano-scaled In2O3:Sn films deposited by spray pyrolysis are considered in the present report. It is shown that multicomponent In2O3:Sn-based films are promising material for the application in thermoelectric devices. It is established that the increase in the efficiency of thermoelectric conversion at CSn~5% occurred due to nano-scaled structure of the films studied and the effect of the grain boundary filtering of the low energy electrons. There are also analyzed the limitations that may appear during such material using in devices developed for the market of thermoelectric generators and refrigerators. Studies showed that the stability of nano-scaled film’s parameters is the main problem which can limit the application of these materials in high temperature thermoelectric converters.
Abstract: In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.
Abstract: Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.
Abstract: Structural relaxation processes in optical coatings represent a fundamental limit to the sensitivity of gravitational waves detectors, MEMS, optical metrology and entangled state experiments. To face this problem, many research lines are now active, in particular the characterization of new materials and novel solutions to be employed as coatings in future gravitational wave detectors. Nano-layered coating deposition is among the most promising techniques. We report on the measurement of acoustic loss of nm-layered composites (Ti2O/SiO2), performed with the GeNS nodal suspension, compared with sputtered λ/4 thin films nowadays employed.
Abstract: We study the fracture mechanics of peeling of thin films perfectly bonded to a rigid substrate of any random surface topology using an analytical formulation. A generalized theoretical model has been developed to determine the peel strength of thin elastic films. It is demonstrated that an improvement in the peel strength can be achieved by modifying the surface characteristics of the rigid substrate. Characterization study has been performed to analyze the effect of different parameters on effective peel force from the rigid surface. Different surface profiles such as circular and sinusoidal has been considered to demonstrate the bonding characteristics of film-substrate interface. Condition for the instability in the debonding of the film is analyzed, where the localized self-debonding arises depending upon the film and surface characteristics. This study is towards improved adhesion strength of thin films to rigid substrate using different textured surfaces.
Abstract: Lithium niobate (LiNbO3) nanostructures are prepared on quartz substrate by the sol-gel method. They have been deposited with different molarity concentration and annealed at 500°C. These samples are characterized and analyzed by X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM). The measured results showed an importance increasing in molarity concentrations that indicate the structure starts to become crystal, regular, homogeneous, well crystal distributed, which made it more suitable for optical waveguide application.
Abstract: In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N5+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).
Abstract: This work studies the effect of thickness on structural
and electrical properties of CuAlS2 thin films grown by two stage
vacuum thermal evaporation technique. CuAlS2 thin films of
thicknesses 50nm, 100nm and 200nm were deposited on suitably
cleaned corning 7059 glass substrate at room temperature (RT). In
the first stage Cu-Al precursors were grown at room temperature by
thermal evaporation and in the second stage Cu-Al precursors were
converted to CuAlS2 thin films by sulfurisation under sulfur
atmosphere at the temperature of 673K. The structural properties of
the films were examined by X-ray diffraction (XRD) technique while
electrical properties of the specimens were studied using four point
probe method. The XRD studies revealed that the films are of
crystalline in nature having tetragonal structure. The variations of the
micro-structural parameters, such as crystallite size (D), dislocation
density ( ), and micro-strain ( ), with film thickness were
investigated. The results showed that the crystallite sizes increase as
the thickness of the film increases. The dislocation density and
micro-strain decreases as the thickness increases. The resistivity ( )
of CuAlS2 film is found to decrease with increase in film thickness,
which is related to the increase of carrier concentration with film
thickness. Thus thicker films exhibit the lowest resistivity and high
carrier concentration, implying these are the most conductive films.
Low electrical resistivity and high carrier concentration are widely
used as the essential components in various optoelectronic devices
such as light-emitting diode and photovoltaic cells.
Abstract: CuO thin films were deposited by spray ultrasonic
pyrolysis with different precursor solution. Two staring solution slats
were used namely: copper acetate and copper chloride. The influence
of these solutions on CuO thin films proprieties of is instigated. The
X rays diffraction (XDR) analysis indicated that the films deposed
with copper acetate are amorphous however the films elaborated with
copper chloride have monoclinic structure. UV- Visible transmission
spectra showed a strong absorbance of the deposited CuO thin films
in the visible region. Electrical characterization has shown that CuO
thin films prepared with copper acetate have a higher electrical
conductivity.
Abstract: The present study deals with the characterization of
CrSiN coatings obtained by PVD magnetron sputtering systems.
CrSiN films were deposited with different Si contents, in order to
check the effect of at.% variation on the different properties of the
Cr–N system. Coatings were characterized by scanning electron
microscopy (SEM) for thickness measurements, X-ray diffraction.
Surface morphology and the roughness characteristics were explored
using AFM, Mechanicals properties, elastic and plastic deformation
resistance of thin films were investigated using nanoindentation test. We observed that the Si addition improved the hardness and the
Young’s modulus of the Cr–N system. Indeed, the hardness value is
18,56 GPa for CrSiN coatings. Besides, the Young’s modulus value
is 224,22 GPa for CrSiN coatings for Si content of 1.2 at.%.
Abstract: Si-Ge solid solutions (bulk poly- and mono-crystalline
samples, thin films) are characterized by high perspectives for
application in semiconductor devices, in particular, optoelectronics
and microelectronics. From this point of view, complex studying of
structural state of the defects and structural-sensitive physical
properties of Si-Ge solid solutions depending on the contents of Si
and Ge components is very important. Present work deals with the
investigations of microstructure, microhardness, internal friction and
shear modulus of Si1-xGex(x≤0,02) bulk monocrystals conducted at
room temperature. Si-Ge bulk crystals were obtained by Czochralski
method in [111] crystallographic direction. Investigated
monocrystalline Si-Ge samples are characterized by p-type
conductivity and carriers’ concentration 5.1014-1.1015cm-3.
Microhardness was studied on Dynamic Ultra Micro hardness Tester
DUH-201S with Berkovich indenter. Investigate samples are characterized with 0,5x0,5x(10-15)mm3
sizes, oriented along [111] direction at torsion oscillations ≈1Hz,
multistage changing of internal friction and shear modulus has been
revealed in an interval of strain amplitude of 10-5-5.10-3. Critical
values of strain amplitude have been determined at which hysteretic
changes of inelastic characteristics and microplasticity are observed. The critical strain amplitude and elasticity limit values are also
determined. Dynamic mechanical characteristics decreasing trend is
shown with increasing Ge content in Si-Ge solid solutions. Observed
changes are discussed from the point of view of interaction of various
dislocations with point defects and their complexes in a real structure
of Si-Ge solid solutions.
Abstract: These Monolayer and multilayer coatings of CrN and
AlCrN deposited on 100Cr6 (AISI 52100) substrate by PVD
magnetron sputtering system. The microstructures of the coatings
were characterized using atomic force microscopy (AFM). The AFM
analysis revealed the presence of domes and craters that are
uniformly distributed over all surfaces of the various layers.
Nanoindentation measurement of CrN coating showed maximum
hardness (H) and modulus (E) of 14 GPa and 190 GPa, respectively.
The measured H and E values of AlCrN coatings were found to be 30
GPa and 382 GPa, respectively. The improved hardness in both the
coatings was attributed mainly to a reduction in crystallite size and
decrease in surface roughness. The incorporation of Al into the CrN
coatings has improved both hardness and Young’s modulus.
Abstract: Development of new generation bio-tribological,
multilayer coatings opens an avenue for fabrication of future hightech
functional surfaces. In the presented work, nano-composite,
Cr/CrN+[Cr/ a-C:H implanted by metallic nanocrystals] multilayer
coatings have been developed for surface protection of medical tools.
Thin films were fabricated by a hybrid Pulsed Laser Deposition
technique. Complex microstructure analysis of nanomultilayer
coatings, subjected to mechanical and biological tests, were
performed by means of transmission electron microscopy (TEM).
Microstructure characterization revealed the layered arrangement of
Cr23C6 nanoparticles in multilayer structure. Influence of deposition
conditions on bio-tribological properties of the coatings was studied.
The bio-tests were used as a screening tool for the analyzed
nanomultilayer coatings before they could be deposited on medical
tools. Bio-medical tests were done using fibroblasts. The mechanical
properties of the coatings were investigated by means of a ball-ondisc
mechanical test. The micro hardness was done using Berkovich
indenter. The scratch adhesion test was done using Rockwell
indenter. From the bio-tribological point of view, the optimal
properties had the C106_1 material.
Abstract: Thin ZnO films are deposited on glass substrates via
sol–gel method and dip-coating. The films are prepared from zinc
acetate dehydrate as a starting reagent. After that the as-prepared
ZnO sol is aged for different periods (0, 1, 3, 5, 10, 15 and 30 days).
Nanocrystalline thin films are deposited from various sols. The
effect ZnO sols aging time on the structural and photocatalytic
properties of the films is studied. The films surface is studied by
Scanning Electron Microscopy. The effect of the aging time of the
starting solution is studied in the photocatalytic degradation of
Reactive Black 5 (RB5) by UV-vis spectroscopy. The experiments
are conducted upon UV-light illumination and in complete darkness.
The variation of the absorption spectra shows the degradation of RB5
dissolved in water, as a result of the reaction, occurring on the surface
of the films and promoted by UV irradiation. The initial
concentrations of dye (5, 10 and 20 ppm) and the effect of the aging
time are varied during the experiments. The results show, that the
increasing aging time of starting solution with respect to ZnO
generally promotes photocatalytic activity. The thin films obtained
from ZnO sol, which is aged 30 days have best photocatalytic
degradation of the dye (97,22%) in comparison with the freshly
prepared ones (65,92%). The samples and photocatalytic
experimental results are reproducible. Nevertheless, all films exhibit
a substantial activity in both UV light and darkness, which is
promising for the development of new ZnO photocatalysts by sol-gel
method.