Abstract: Shrunken patterning for integrated device
manufacturing requires surface cleanliness and surface smoothness in
wet chemical processing [1]. It is necessary to control all process
parameters perfectly especially for the common cleaning technique
RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and
effect of surface preparation parameters are discussed. The properties
of RCA wet chemical processing in silicon technology is based on
processing time, temperature, concentration and megasonic power of
SC-1 and QDR. An improvement of wafer surface preparation by
the enhanced variables of the wet cleaning chemical process is
proposed.
Abstract: A new multi inner stage (MIS) cyclone was designed to
remove the acidic gas and fine particles produced from electronic
industry. To characterize gas flow in MIS cyclone, pressure and
velocity distribution were calculated by means of CFD program. Also,
the flow locus of fine particles and particle removal efficiency were
analyzed by Lagrangian method. When outlet pressure condition was
–100mmAq, the efficiency was the best in this study.