Abstract: Shrunken patterning for integrated device
manufacturing requires surface cleanliness and surface smoothness in
wet chemical processing [1]. It is necessary to control all process
parameters perfectly especially for the common cleaning technique
RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and
effect of surface preparation parameters are discussed. The properties
of RCA wet chemical processing in silicon technology is based on
processing time, temperature, concentration and megasonic power of
SC-1 and QDR. An improvement of wafer surface preparation by
the enhanced variables of the wet cleaning chemical process is
proposed.