Abstract: The semiconductor industry is placing an increased
emphasis on emerging materials and devices that may provide
improved performance, or provide novel functionality for devices.
Recently, graphene, as a true two-dimensional carbon material, has
shown fascinating applications in electronics. In this paper detailed
discussions are introduced for possible applications of grapheme
Transistor in RF and digital devices.
Abstract: This work offers a study of new simple compact model
of dual-drain Magnetic Field Effect Transistor (MAGFET) including
geometrical effects and biasing dependency. An explanation of the
sensitivity is investigated, involving carrier deflection as the dominant
operating principle. Finally, model verification with simulation results
is introduced to ensure that acceptable error of 2% is achieved.
Abstract: Graphene-metal contact resistance limits the performance of graphene-based electrical devices. In this work, we have fabricated both graphene field-effect transistors (GFET) and transfer length measurement (TLM) test devices with titanium contacts. The purpose of this work is to compare the contact resistances that can be numerically extracted from the GFETs and measured from the TLM structures. We also provide a brief review of the work done in the field to solve the contact resistance problem.