Abstract: Over the past years, the EMCCD has had a profound
influence on photon starved imaging applications relying on its unique
multiplication register based on the impact ionization effect in the
silicon. High signal-to-noise ratio (SNR) means high image quality.
Thus, SNR improvement is important for the EMCCD. This work
analyzes the SNR performance of an EMCCD with gain off and on. In
each mode, simplified SNR models are established for different
integration times. The SNR curves are divided into readout noise (or
CIC) region and shot noise region by integration time. Theoretical
SNR values comparing long frame integration and frame adding in
each region are presented and discussed to figure out which method is
more effective. In order to further improve the SNR performance,
pixel binning is introduced into the EMCCD. The results show that
pixel binning does obviously improve the SNR performance, but at the
expensive of the spatial resolution.
Abstract: Electron multiplying charge coupled devices (EMCCDs) have revolutionized the world of low light imaging by introducing on-chip multiplication gain based on the impact ionization effect in the silicon. They combine the sub-electron readout noise with high frame rates. Signal-to-noise Ratio (SNR) is an important performance parameter for low-light-level imaging systems. This work investigates the SNR performance of an EMCCD operated in Non-inverted Mode (NIMO) and Inverted Mode (IMO). The theory of noise characteristics and operation modes is presented. The results show that the SNR of is determined by dark current and clock induced charge at high gain level. The optimum SNR performance is provided by an EMCCD operated in NIMO in short exposure and strong cooling applications. In contrast, an IMO EMCCD is preferable.