Abstract: Scalability poses a severe threat to the existing
DRAM technology. The capacitors that are used for storing and
sensing charge in DRAM are generally not scaled beyond 42nm.
This is because; the capacitors must be sufficiently large for reliable
sensing and charge storage mechanism. This leaves DRAM memory
scaling in jeopardy, as charge sensing and storage mechanisms
become extremely difficult. In this paper we provide an overview of
the potential and the possibilities of using Phase Change Memory
(PCM) as an alternative for the existing DRAM technology. The
main challenges that we encounter in using PCM are, the limited
endurance, high access latencies, and higher dynamic energy
consumption than that of the conventional DRAM. We then provide
an overview of various methods, which can be employed to
overcome these drawbacks. Hybrid memories involving both PCM
and DRAM can be used, to achieve good tradeoffs in access latency
and storage density. We conclude by presenting, the results of these
methods that makes PCM a potential replacement for the current
DRAM technology.