Abstract: The study of the transport coefficients in electronic
devices is currently carried out by analytical and empirical models.
This study requires several simplifying assumptions, generally
necessary to lead to analytical expressions in order to study the
different characteristics of the electronic silicon-based devices.
Further progress in the development, design and optimization of
Silicon-based devices necessarily requires new theory and modeling
tools. In our study, we use the PSO (Particle Swarm Optimization)
technique as a computational tool to develop analytical approaches in
order to study the transport phenomenon of the electron in crystalline
silicon as function of temperature and doping concentration. Good
agreement between our results and measured data has been found.
The optimized analytical models can also be incorporated into the
circuits simulators to study Si-based devices without impact on the
computational time and data storage.