Abstract: The following article presents Technology Centre of
Ostrava (TCO) in the Czech Republic describing the structure and
main research areas realized by the project ENET - Energy Units for
Utilization of non Traditional Energy Sources. More details are
presented from the research program dealing with transformation,
accumulation and distribution of electric energy. Technology Centre
has its own energy mix consisting of alternative sources of fuel
sources that use of process gases from the storage part and also the
energy from distribution network. The article will be focus on the
properties and application possibilities SiC semiconductor devices for
power semiconductor converter for photovoltaic systems.
Abstract: The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.