Abstract: The ferroelectric behavior of barium strontium
titanate (BST) in thin film form has been investigated in order to
study the possibility of using BST for ferroelectric gate-field effect
transistor (FeFET) for memory devices application. BST thin films
have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The
variation of the dielectric constant (ε) and tan δ with frequency have
been studied to ensure the dielectric quality of the material. The
results show that at low frequencies, ε increases as the Ba content
increases, whereas at high frequencies, it shows the opposite
variation, which is attributed to the dipole dynamics. tan δ shows low
values with a peak at the mid-frequency range. The ferroelectric
behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V
characteristics. The results show that the strength of the ferroelectric
hysteresis loop increases as the Ba content increases; this is attributed
to the grain size and dipole dynamics effect.