Abstract: This paper reports on the theoretical performance
analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum
well (MQW) vertical cavity surface emitting laser (VCSEL) on the
ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has
been obtained at room temperature for 7.5 mA injection current. The
material gain has been estimated to be ~3156 cm-1 at room
temperature with the injection carrier concentration of 2×1017 cm-3.
The modulation bandwidth of this laser is measured to be 9.34 GHz
at room temperature for the biasing current of 2 mA above the
threshold value. The outcomes reveal that the proposed InGaAsbased
MQW laser is the promising one for optical communication
system.