Abstract: This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.
Abstract: This paper is about method to produce a stable and
accurate constant output pulse width regardless of the amplitude,
period and pulse width variation of the input signal source. The pulse
generated is usually being used in numerous applications as the
reference input source to other circuits in the system. Therefore, it is
crucial to produce a clean and constant pulse width to make sure the
system is working accurately as expected.