Optical and Structural Properties of a ZnS Buffer Layer Fabricated with Deposition Temperature of RF Magnetron Sputtering System
Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
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Akimoto, Solar Energy Materials & Solar cells 93 (2009) 970.
[2] M.A. Contreras, B. Egass, K. Ramanathan, J. Hiltner, A. Swartzlander, F.
Hasoon, R. Noufi, Prog. Photovolt: Res. Appl. 7 (1999) 311.
[3] A. Goudarzi, G.M. Aval, R. Sahraei, H. Ahmadpoor, Thin Solid Films
516 (2008) 4953
[4] K. Kushiya, Solar Energy 77 (2004) 717.
[5] A. Yamada, K. Matsubara, K. Sakurai, S. Ishizuka, H. Tampo, P.J. Fons,
K. Iwata, S. Niki, Appl. Phys. Lett. 85 (2004) 5607.
[6] T. Nakada, and M. Mizutani, Jpn.J. Appl. Phys. 41 (2002) 165.
[7] T. Nakada, M. Mizutani, proc. 23rd IEEE Photovoltaic Specialist Conf.,
Anchorage 2000, IEEE New York, pp.529 (2000).
[8] S.W. Shin, S.R. Kang, K.V. Gurav, J.H. Yun, J.H. Moon, J.Y. Lee, J.H.
Kim, Solar Energy 85 (2011) 2903.
[9] J.W. Lee, S.W. Lee, S.Y. Cho, S.T. Kim, I.Y. Park, Y.D. Choi, Mater.
Chem. Phys. 77 (2002) 254.
[10] U. Gangopadhyay, K.G. Kim, D. Mangalaraj, J.S. Yi, Appl. Surf. Sci. 230
(2004) 364.
[11] V.L. Gayou, B. S. Hernandez, M.E. Constantino, E.R. Andrés, T. D├¡az,
R.D. Macuil, M.R. L├│pez, Vacuum 84 (2010) 1191.
[12] Z.Z. Zhang, D.Z. Shen, J.Y. Zhang, C.X. Shan, Y.M. Lu, Y.C. Liu, B.H.
Li, D.X. Zhao, B. Yao, X. W. Fan, Thin Solid Films 513 (2006) 114.
[13] S.D. Sartale, B.R. Sankapal, M. Lux-Steiner, A. Ennaoui, Thin Solid
Films 480 (2005) 168.
[14] D.A. Johnston, M.H. Garletto, K.T.R. Reddy, I. Forbes, R.W. Miles, Thin
Solid Films 403 (2002) 102.
[15] A. Kassim, S. Nagalingam, H.S. Min, N. Karrim, Arabian Journal of
Chemistry 3 (2010) 243.
[16] H. Hiramatsu, H. Ohta, M. Hirano, H. Hosono, Solid State
Communications 124 (2002) 411.
[1] M.M. Islam, S. Ishizuka, A. Yamada, K. Sakurai, S. NIki, T. Sakurai, K.
Akimoto, Solar Energy Materials & Solar cells 93 (2009) 970.
[2] M.A. Contreras, B. Egass, K. Ramanathan, J. Hiltner, A. Swartzlander, F.
Hasoon, R. Noufi, Prog. Photovolt: Res. Appl. 7 (1999) 311.
[3] A. Goudarzi, G.M. Aval, R. Sahraei, H. Ahmadpoor, Thin Solid Films
516 (2008) 4953
[4] K. Kushiya, Solar Energy 77 (2004) 717.
[5] A. Yamada, K. Matsubara, K. Sakurai, S. Ishizuka, H. Tampo, P.J. Fons,
K. Iwata, S. Niki, Appl. Phys. Lett. 85 (2004) 5607.
[6] T. Nakada, and M. Mizutani, Jpn.J. Appl. Phys. 41 (2002) 165.
[7] T. Nakada, M. Mizutani, proc. 23rd IEEE Photovoltaic Specialist Conf.,
Anchorage 2000, IEEE New York, pp.529 (2000).
[8] S.W. Shin, S.R. Kang, K.V. Gurav, J.H. Yun, J.H. Moon, J.Y. Lee, J.H.
Kim, Solar Energy 85 (2011) 2903.
[9] J.W. Lee, S.W. Lee, S.Y. Cho, S.T. Kim, I.Y. Park, Y.D. Choi, Mater.
Chem. Phys. 77 (2002) 254.
[10] U. Gangopadhyay, K.G. Kim, D. Mangalaraj, J.S. Yi, Appl. Surf. Sci. 230
(2004) 364.
[11] V.L. Gayou, B. S. Hernandez, M.E. Constantino, E.R. Andrés, T. D├¡az,
R.D. Macuil, M.R. L├│pez, Vacuum 84 (2010) 1191.
[12] Z.Z. Zhang, D.Z. Shen, J.Y. Zhang, C.X. Shan, Y.M. Lu, Y.C. Liu, B.H.
Li, D.X. Zhao, B. Yao, X. W. Fan, Thin Solid Films 513 (2006) 114.
[13] S.D. Sartale, B.R. Sankapal, M. Lux-Steiner, A. Ennaoui, Thin Solid
Films 480 (2005) 168.
[14] D.A. Johnston, M.H. Garletto, K.T.R. Reddy, I. Forbes, R.W. Miles, Thin
Solid Films 403 (2002) 102.
[15] A. Kassim, S. Nagalingam, H.S. Min, N. Karrim, Arabian Journal of
Chemistry 3 (2010) 243.
[16] H. Hiramatsu, H. Ohta, M. Hirano, H. Hosono, Solid State
Communications 124 (2002) 411.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:59230", author = "Won Song and Bo-Ra Koo and Seok Eui Choi and Yong-Taeg Oh and Dong-Chan Shin", title = "Optical and Structural Properties of a ZnS Buffer Layer Fabricated with Deposition Temperature of RF Magnetron Sputtering System", abstract = "Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties", keywords = "ZnS thin film, Buffer layer, CIGS, Solar cell.", volume = "6", number = "12", pages = "1172-3", }