Abstract: Bode stability analysis based on transmission line
modeling (TLM) for single wall carbon nanotube (SWCNT)
interconnects used in 3D-VLSI circuits is investigated for the first
time. In this analysis, the dependence of the degree of relative
stability for SWCNT interconnects on the geometry of each tube has
been acquired. It is shown that, increasing the length and diameter of
each tube, SWCNT interconnects become more stable.