The Role of Ga to Improve AlN-Nucleation Layer for Al0.1Ga0.9N/Si(111)
Group-III nitride material as particularly AlxGa1-xN is
one of promising optoelectronic materials to require for shortwavelength
devices. To achieve the high-quality AlxGa1-xN films for
a high performance of such devices, AlN-nucleation layers are the
important factor. To improve the AlN-nucleation layers with a
variation of Ga-addition, XRD measurements were conducted to
analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the
minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec
and 750 arcsec, respectively. SEM and AFM measurements were
performed to observe the surface morphology and TEM
measurements to identify the microstructures and orientations.
Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation
layers improved the surface diffusion to form moreuniform
crystallites in structure and size, better alignment of each
crystallite, and better homogeneity of island distribution. This, hence,
improves the orientation of epilayers on the Si-surface and finally
improves the crystalline quality and reduces the residual strain of
subsequent Al0.1Ga0.9N layers.
[1] S. Hwang, M. Islam, B. Zhang, M. Lachab, J. Dion, A. Heidari, H.
Nazir,V. Adivarahan, and A. Khan: Appl. Phys. Express 4 (2011)
012102.
[2] V. Adivarahan, A. Heidari, B. Zhang, Q. Fareed, S. Hwang, M. Islam,
and A. Khan: Appl. Phys. Express 2 (2009) 102101.
[3] W. H. Sun, J. Zhang, J. Yang, H. P. Maruska, A. Khan, R. Liu, and F.
A. Ponce: Appl. Phys. Lett. 87 (2005) 211915.
[4] P. Saengkaew, A. Dadgar, J..Blaesing, T. Hempel, P. Veit, J. Christen
and A. Krost: J. Cryst. Growth 311 (2009) 3742.
[5] S. Boeykens, M. R. Leys, M. Germain, K. Cheng, J. Derluyn, B. Van
Daele, G. Van Tendeloo, R. Belmans, G. Borghs: Phys. Status Solidi C
3 (2006) 1579.
[6] C. H. Wei, J. H. Edgar, C. Ignatiev and J. Chaudhuri: Thin Solid Films
360 (2000) 34.
[7] J. Cao, S. Li, G. Fan, Y. Zhang, S. Zheng, Y. Yin, J. Huang and J. Su, J.
Cryst. Growth 312 (2010) 2044.
[8] M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang and E. Kuokstis:
Jpn. J. Appl. Phys. 44 (2005) 7191.
[1] S. Hwang, M. Islam, B. Zhang, M. Lachab, J. Dion, A. Heidari, H.
Nazir,V. Adivarahan, and A. Khan: Appl. Phys. Express 4 (2011)
012102.
[2] V. Adivarahan, A. Heidari, B. Zhang, Q. Fareed, S. Hwang, M. Islam,
and A. Khan: Appl. Phys. Express 2 (2009) 102101.
[3] W. H. Sun, J. Zhang, J. Yang, H. P. Maruska, A. Khan, R. Liu, and F.
A. Ponce: Appl. Phys. Lett. 87 (2005) 211915.
[4] P. Saengkaew, A. Dadgar, J..Blaesing, T. Hempel, P. Veit, J. Christen
and A. Krost: J. Cryst. Growth 311 (2009) 3742.
[5] S. Boeykens, M. R. Leys, M. Germain, K. Cheng, J. Derluyn, B. Van
Daele, G. Van Tendeloo, R. Belmans, G. Borghs: Phys. Status Solidi C
3 (2006) 1579.
[6] C. H. Wei, J. H. Edgar, C. Ignatiev and J. Chaudhuri: Thin Solid Films
360 (2000) 34.
[7] J. Cao, S. Li, G. Fan, Y. Zhang, S. Zheng, Y. Yin, J. Huang and J. Su, J.
Cryst. Growth 312 (2010) 2044.
[8] M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang and E. Kuokstis:
Jpn. J. Appl. Phys. 44 (2005) 7191.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:49745", author = "AlNPhannee Saengkaew and Armin Dadgar and Juergen Blaesing and Thomas Hempel and Sakuntam Sanorpim and Chanchana Thanachayanont and Visittapong Yordsri and Watcharee Rattanasakulthong and Alois Krost", title = "The Role of Ga to Improve AlN-Nucleation Layer for Al0.1Ga0.9N/Si(111)", abstract = "Group-III nitride material as particularly AlxGa1-xN is
one of promising optoelectronic materials to require for shortwavelength
devices. To achieve the high-quality AlxGa1-xN films for
a high performance of such devices, AlN-nucleation layers are the
important factor. To improve the AlN-nucleation layers with a
variation of Ga-addition, XRD measurements were conducted to
analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the
minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec
and 750 arcsec, respectively. SEM and AFM measurements were
performed to observe the surface morphology and TEM
measurements to identify the microstructures and orientations.
Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation
layers improved the surface diffusion to form moreuniform
crystallites in structure and size, better alignment of each
crystallite, and better homogeneity of island distribution. This, hence,
improves the orientation of epilayers on the Si-surface and finally
improves the crystalline quality and reduces the residual strain of
subsequent Al0.1Ga0.9N layers.", keywords = "AlGaN, UV-LEDs, seed layers, AFM, TEM", volume = "5", number = "11", pages = "911-4", }