HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.
[1] I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, “Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application,” in IEDM Tech. Dig., 2005, pp. 750–753.
[2] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, “Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM,” in IEDM Tech. Dig., 2008, pp. 297–300.
[3] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
"HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity," Electron Device Letters, IEEE,
vol. 32, pp. 566-568, 2011.
[4] Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F.
Kang, "Temperature instability of resistive switching on HfOx-based
RRAM devices," IEEE Electron Device Letters, vol. 31, pp. 476-478,
2010.
[5] D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K.
Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim,
U.-I. Chung, J. T. Moon, and B. I. Ryu, “Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films,” Appl. Phys. Lett., vol. 88, no. 20, pp. 202 102-1–202 102-3,
May 2006.
[6] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, “A unified physical model of switching behavior in oxide based
RRAM,” in VLSI Symp. Tech. Dig., 2008, pp. 100–101.
[7] H. Y. Lee, et al., "Low power and high speed bipolar switching with a
thin reactive Ti buffer layer in robust HfO2 based RRAM," in 2008
IEEE International Electron Devices Meeting, pp. 1-4.
[1] I. G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U.-I. Chung, J. T. Moon, and B. I. Ryu, “Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application,” in IEDM Tech. Dig., 2005, pp. 750–753.
[2] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng,
C. H. Lin, F. Chen, C. H. Lien, and M.-J. Tsai, “Low power and high
speed bipolar switching with a thin reactive ti buffer layer in robust
HfO2 based RRAM,” in IEDM Tech. Dig., 2008, pp. 297–300.
[3] Z. Fang, H. Y. Yu, X. Li, N. Singh, G. Q. Lo, and D. L. Kwong,
"HfOx/TiOx/HfOx/TiOx Multilayer-Based Forming-Free RRAM
Devices With Excellent Uniformity," Electron Device Letters, IEEE,
vol. 32, pp. 566-568, 2011.
[4] Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F.
Kang, "Temperature instability of resistive switching on HfOx-based
RRAM devices," IEEE Electron Device Letters, vol. 31, pp. 476-478,
2010.
[5] D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K.
Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim,
U.-I. Chung, J. T. Moon, and B. I. Ryu, “Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films,” Appl. Phys. Lett., vol. 88, no. 20, pp. 202 102-1–202 102-3,
May 2006.
[6] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, “A unified physical model of switching behavior in oxide based
RRAM,” in VLSI Symp. Tech. Dig., 2008, pp. 100–101.
[7] H. Y. Lee, et al., "Low power and high speed bipolar switching with a
thin reactive Ti buffer layer in robust HfO2 based RRAM," in 2008
IEEE International Electron Devices Meeting, pp. 1-4.
@article{"International Journal of Electrical, Electronic and Communication Sciences:65038", author = "B. B. Weng and Z. Fang and Z. X. Chen and X. P. Wang and G. Q. Lo and D. L. Kwong", title = "ALD HfO2 Based RRAM with Ti Capping", abstract = "HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.
", keywords = "HfOx, resistive switching, RRAM, metal capping. ", volume = "7", number = "9", pages = "1159-2", }
