Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N
Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
[1] Ž. Gačević, V. Gómez, N. G. Lepetit, P. Rodríguez, A. Bengoechea, S. F. Garrido, R. Nötzel, and E. Calleja, "A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy," Journal of Crystal Growth, 2012.
[2] E. Monroy, F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, "Present Status of III-Nitride Based Photodetectors," MRS Online Proceedings Library, vol. 622, 2000.
[3] M.-L. Tu, Y.-K. Su, S.-J. Chang, and R. W. Chuang, "GaN UV photodetector by using transparency antimony-doped tin oxide electrode," Journal of Crystal Growth, vol. 298, pp. 744-747, 2007.
[4] S.-P. Chang, S.-J. Chang, C.-Y. Lu, Y.-Z. Chiou, R. W. Chuang, and H.-C. Lin, "Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates," Journal of Crystal Growth, vol. 311, pp. 3003-3006, 2009.
[5] F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, "Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate," Solid-State Electronics, vol. 57, pp. 39-42, 2011.
[6] Z. Hassan, Y. Lee, F. Yam, K. Ibrahim, M. Kordesch, W. Halverson, and P. Colter, "Characteristics of low-temperature-grown GaN films on Si (111)," Solid state communications, vol. 133, pp. 283-287, 2005.
[7] F. Yam and Z. Hassan, "Structural and optical characteristics of porous GaN generated by electroless chemical etching," Materials Letters, vol. 63, pp. 724-727, 2009.
[8] A. Ramizy, Z. Hassan, and K. Omar, "Porous GaN on Si(1 1 1) and its application to hydrogen gas sensor," Sensors and Actuators B: Chemical, vol. 155, pp. 699-708, 2011.
[9] F. Yam, Z. Hassan, and S. Ng, "Porous GaN prepared by UV assisted electrochemical etching," Thin solid films, vol. 515, pp. 3469-3474, 2007.
[10] L.-W. Ji, T.-H. Fang, S.-J. Young, C.-C. Liu, and Y.-L. Chai, "Characteristics of III-nitride photodiodes with self-assembled quantum dots," Materials Letters, vol. 61, pp. 1619-1621, 2007.
[11] K. Al-heuseen, M. R. Hashim, and N. K. Ali, "Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching," Physica B: Condensed Matter, vol. 405, pp. 3176-3179, 2010.
[12] K. Beh, F. Yam, C. Chin, S. Tneh, and Z. Hassan, "The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy," Journal of Alloys and Compounds, vol. 506, pp. 343-346, 2010.
[13] K. Al-Heuseen, M. R. Hashim, and N. K. Ali, "Effect of different electrolytes on porous GaN using photo-electrochemical etching," Applied Surface Science, vol. 257, pp. 6197-6201, 2011.
[14] S. H. Abud, Z. Hassan, and F. Yam, "Enhancement of Structural and Optical Properties of Porous In0. 27Ga0. 73N Thin Film Synthesized Using Electrochemical Etching Technique," Int. J. Electrochem. Sci, vol. 7, pp. 10038-10046, 2012.
[15] A. Vajpeyi, S. Tripathy, S. Chua, and E. Fitzgerald, "Investigation of optical properties of nanoporous GaN films," Physica E: Low-dimensional Systems and Nanostructures, vol. 28, pp. 141-149, 2005.
[16] S. Sze and K. K. Ng, "Metal-Semiconductor Contacts," Physics of semiconductor devices, vol. 2, pp. 245-311, 1981.
[17] M. Mello, M. De Vittorio, A. Passaseo, M. Lomascolo, and A. de Risi, "Optical system for CO and NO gas detection in the exhaust manifold of combustion engines," Energy Conversion and Management, vol. 48, pp. 2911-2917, 2007.
[18] Y. Tian, S.-J. Chua, and H. Wang, "Theoretical study of characteristics in GaN metal–semiconductor–metal photodetectors," Solid-State Electronics, vol. 47, pp. 1863-1867, 2003.
[19] M. A. Mahdi, J. J. Hassan, S. S. Ng, Z. Hassan, and N. M. Ahmed, "Synthesis and characterization of single-crystal CdS nanosheet for high-speed photodetection," Physica E: Low-dimensional Systems and Nanostructures, vol. 44, pp. 1716-1721, 2012.
[20] L. Li, P. Wu, X. Fang, T. Zhai, L. Dai, M. Liao, Y. Koide, H. Wang, Y. Bando, and D. Golberg, "Single‐Crystalline CdS Nanobelts for Excellent Field‐Emitters and Ultrahigh Quantum‐Efficiency Photodetectors," Advanced Materials, vol. 22, pp. 3161-3165, 2010.
[1] Ž. Gačević, V. Gómez, N. G. Lepetit, P. Rodríguez, A. Bengoechea, S. F. Garrido, R. Nötzel, and E. Calleja, "A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy," Journal of Crystal Growth, 2012.
[2] E. Monroy, F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart, "Present Status of III-Nitride Based Photodetectors," MRS Online Proceedings Library, vol. 622, 2000.
[3] M.-L. Tu, Y.-K. Su, S.-J. Chang, and R. W. Chuang, "GaN UV photodetector by using transparency antimony-doped tin oxide electrode," Journal of Crystal Growth, vol. 298, pp. 744-747, 2007.
[4] S.-P. Chang, S.-J. Chang, C.-Y. Lu, Y.-Z. Chiou, R. W. Chuang, and H.-C. Lin, "Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates," Journal of Crystal Growth, vol. 311, pp. 3003-3006, 2009.
[5] F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, and Y. Zheng, "Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate," Solid-State Electronics, vol. 57, pp. 39-42, 2011.
[6] Z. Hassan, Y. Lee, F. Yam, K. Ibrahim, M. Kordesch, W. Halverson, and P. Colter, "Characteristics of low-temperature-grown GaN films on Si (111)," Solid state communications, vol. 133, pp. 283-287, 2005.
[7] F. Yam and Z. Hassan, "Structural and optical characteristics of porous GaN generated by electroless chemical etching," Materials Letters, vol. 63, pp. 724-727, 2009.
[8] A. Ramizy, Z. Hassan, and K. Omar, "Porous GaN on Si(1 1 1) and its application to hydrogen gas sensor," Sensors and Actuators B: Chemical, vol. 155, pp. 699-708, 2011.
[9] F. Yam, Z. Hassan, and S. Ng, "Porous GaN prepared by UV assisted electrochemical etching," Thin solid films, vol. 515, pp. 3469-3474, 2007.
[10] L.-W. Ji, T.-H. Fang, S.-J. Young, C.-C. Liu, and Y.-L. Chai, "Characteristics of III-nitride photodiodes with self-assembled quantum dots," Materials Letters, vol. 61, pp. 1619-1621, 2007.
[11] K. Al-heuseen, M. R. Hashim, and N. K. Ali, "Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching," Physica B: Condensed Matter, vol. 405, pp. 3176-3179, 2010.
[12] K. Beh, F. Yam, C. Chin, S. Tneh, and Z. Hassan, "The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy," Journal of Alloys and Compounds, vol. 506, pp. 343-346, 2010.
[13] K. Al-Heuseen, M. R. Hashim, and N. K. Ali, "Effect of different electrolytes on porous GaN using photo-electrochemical etching," Applied Surface Science, vol. 257, pp. 6197-6201, 2011.
[14] S. H. Abud, Z. Hassan, and F. Yam, "Enhancement of Structural and Optical Properties of Porous In0. 27Ga0. 73N Thin Film Synthesized Using Electrochemical Etching Technique," Int. J. Electrochem. Sci, vol. 7, pp. 10038-10046, 2012.
[15] A. Vajpeyi, S. Tripathy, S. Chua, and E. Fitzgerald, "Investigation of optical properties of nanoporous GaN films," Physica E: Low-dimensional Systems and Nanostructures, vol. 28, pp. 141-149, 2005.
[16] S. Sze and K. K. Ng, "Metal-Semiconductor Contacts," Physics of semiconductor devices, vol. 2, pp. 245-311, 1981.
[17] M. Mello, M. De Vittorio, A. Passaseo, M. Lomascolo, and A. de Risi, "Optical system for CO and NO gas detection in the exhaust manifold of combustion engines," Energy Conversion and Management, vol. 48, pp. 2911-2917, 2007.
[18] Y. Tian, S.-J. Chua, and H. Wang, "Theoretical study of characteristics in GaN metal–semiconductor–metal photodetectors," Solid-State Electronics, vol. 47, pp. 1863-1867, 2003.
[19] M. A. Mahdi, J. J. Hassan, S. S. Ng, Z. Hassan, and N. M. Ahmed, "Synthesis and characterization of single-crystal CdS nanosheet for high-speed photodetection," Physica E: Low-dimensional Systems and Nanostructures, vol. 44, pp. 1716-1721, 2012.
[20] L. Li, P. Wu, X. Fang, T. Zhai, L. Dai, M. Liao, Y. Koide, H. Wang, Y. Bando, and D. Golberg, "Single‐Crystalline CdS Nanobelts for Excellent Field‐Emitters and Ultrahigh Quantum‐Efficiency Photodetectors," Advanced Materials, vol. 22, pp. 3161-3165, 2010.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:65855", author = "Saleh H. Abud and Z. Hassan and F. K. Yam", title = "Metal-Semiconductor-Metal Photodetector Based On Porous In0.08Ga0.92N", abstract = "Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
", keywords = "Porous InGaN, photoluminescence, SMS photodetector. ", volume = "7", number = "12", pages = "1007-3", }