A Nano-Scaled SRAM Guard Band Design with Gaussian Mixtures Model of Complex Long Tail RTN Distributions
This paper proposes, for the first time, how the
challenges facing the guard-band designs including the margin
assist-circuits scheme for the screening-test in the coming process
generations should be addressed. The increased screening error
impacts are discussed based on the proposed statistical analysis
models. It has been shown that the yield-loss caused by the
misjudgment on the screening test would become 5-orders of
magnitude larger than that for the conventional one when the
amplitude of random telegraph noise (RTN) caused variations
approaches to that of random dopant fluctuation. Three fitting methods
to approximate the RTN caused complex Gamma mixtures
distributions by the simple Gaussian mixtures model (GMM) are
proposed and compared. It has been verified that the proposed
methods can reduce the error of the fail-bit predictions by 4-orders of
magnitude.
[1] H. Yamauchi, "A Discussion on SRAM Circuit Design Trend in Deeper
Nanometer-Scale Technologies", Very Large Scale Integration (VLSI)
Systems, IEEE Transactions on Vol. 18 (2010), Issue :5, pp. 763-774
[2] H. Yamauchi, "Embedded SRAM trend in nano-scale CMOS", Memory
Technology, Design and Testing, MTDT 2007. IEEE International
Workshop on (2007), pp. 19 - 22.
[3] H. Yamauchi, "Variation tolerant SRAM circuit design" in IEEE ISSCC
2009 and IEEE A-SSCC 2008
[4] X. Wang, A.R.Brown, B.Cheng and A.Asenov "RTS amplitude
distribution in 20nm SOI FinFETs subject to Statistical Variability",
SISPAD 2012, pp.296-299
[5] X. Wang, G.Roy, O.Saxod, A.Bajolet and A.Juge, A.Asenov "Simulation
Study of Dominant Statistical Variability Sources in 32-nm High-k/Metal
Gate CMOS", IEEE Electron Device Letters - IEEE ELECTRON DEV
LETT , vol. 33, no. 5, pp. 643-645, 2012
[6] K.P.Cheung, J.P.Campbell, S.Potbhare and A.Oates " The amplitude of
random telegraph noise: Scaling implications", Reliability Physics
Symposium (IRPS), 2012 IEEE International, pp.1.1 - 1.3
[7] K. Takeuchi, T.Nagumo and T.Hase "Comprehensive SRAM Design
Methodology for RTN Reliability" , Digest of IEEE Symposium on VLSI
Technology, (2011), pp. 130-131
[8] K. Takeuchi, T.Nagumo, K.Takeda, and S.Asayama, S.Yokogawa,
K.Imai, K.Hayashi "Direct Observation of RTN-induced SRAM Failure
by Accelerated Testing and Its Application to Product Reliability
Assessment " , Digest of IEEE Symposium on VLSI Technology, (2010),
pp. 189-190
[9] Moon, T.K, "The expectation-maximization algorithm" in Signal
Processing Magazine, IEEE, Volume: 13 , Issue: 6, pp. 47 - 60 (1996)
[1] H. Yamauchi, "A Discussion on SRAM Circuit Design Trend in Deeper
Nanometer-Scale Technologies", Very Large Scale Integration (VLSI)
Systems, IEEE Transactions on Vol. 18 (2010), Issue :5, pp. 763-774
[2] H. Yamauchi, "Embedded SRAM trend in nano-scale CMOS", Memory
Technology, Design and Testing, MTDT 2007. IEEE International
Workshop on (2007), pp. 19 - 22.
[3] H. Yamauchi, "Variation tolerant SRAM circuit design" in IEEE ISSCC
2009 and IEEE A-SSCC 2008
[4] X. Wang, A.R.Brown, B.Cheng and A.Asenov "RTS amplitude
distribution in 20nm SOI FinFETs subject to Statistical Variability",
SISPAD 2012, pp.296-299
[5] X. Wang, G.Roy, O.Saxod, A.Bajolet and A.Juge, A.Asenov "Simulation
Study of Dominant Statistical Variability Sources in 32-nm High-k/Metal
Gate CMOS", IEEE Electron Device Letters - IEEE ELECTRON DEV
LETT , vol. 33, no. 5, pp. 643-645, 2012
[6] K.P.Cheung, J.P.Campbell, S.Potbhare and A.Oates " The amplitude of
random telegraph noise: Scaling implications", Reliability Physics
Symposium (IRPS), 2012 IEEE International, pp.1.1 - 1.3
[7] K. Takeuchi, T.Nagumo and T.Hase "Comprehensive SRAM Design
Methodology for RTN Reliability" , Digest of IEEE Symposium on VLSI
Technology, (2011), pp. 130-131
[8] K. Takeuchi, T.Nagumo, K.Takeda, and S.Asayama, S.Yokogawa,
K.Imai, K.Hayashi "Direct Observation of RTN-induced SRAM Failure
by Accelerated Testing and Its Application to Product Reliability
Assessment " , Digest of IEEE Symposium on VLSI Technology, (2010),
pp. 189-190
[9] Moon, T.K, "The expectation-maximization algorithm" in Signal
Processing Magazine, IEEE, Volume: 13 , Issue: 6, pp. 47 - 60 (1996)
@article{"International Journal of Electrical, Electronic and Communication Sciences:58724", author = "Worawit Somha and Hiroyuki Yamauchi", title = "A Nano-Scaled SRAM Guard Band Design with Gaussian Mixtures Model of Complex Long Tail RTN Distributions", abstract = "This paper proposes, for the first time, how the
challenges facing the guard-band designs including the margin
assist-circuits scheme for the screening-test in the coming process
generations should be addressed. The increased screening error
impacts are discussed based on the proposed statistical analysis
models. It has been shown that the yield-loss caused by the
misjudgment on the screening test would become 5-orders of
magnitude larger than that for the conventional one when the
amplitude of random telegraph noise (RTN) caused variations
approaches to that of random dopant fluctuation. Three fitting methods
to approximate the RTN caused complex Gamma mixtures
distributions by the simple Gaussian mixtures model (GMM) are
proposed and compared. It has been verified that the proposed
methods can reduce the error of the fail-bit predictions by 4-orders of
magnitude.", keywords = "Mixtures of Gaussian, Random telegraph noise, EM
algorithm, Long-tail distribution, Fail-bit analysis, Static random
access memory, Guard band design.", volume = "7", number = "3", pages = "310-11", }