Resistive RAM Based on Hfox and its Temperature Instability Study
High performance Resistive Random Access Memory
(RRAM) based on HfOx has been prepared and its temperature
instability has been investigated in this work. With increasing
temperature, it is found that: leakage current at high resistance state
increases, which can be explained by the higher density of traps
inside dielectrics (related to trap-assistant tunneling), leading to a
smaller On/Off ratio; set and reset voltages decrease, which may be
attributed to the higher oxygen ion mobility, in addition to the
reduced potential barrier to create / recover oxygen ions (or oxygen
vacancies); temperature impact on the RRAM retention degradation
is more serious than electrical bias.
[1] G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application," in IEDM Tech. Dig., 2005, pp. 750-753.
[2] D. C. Kim, S. Seo, S. E. Ahn, D. S. Suh, M. J. Lee, B. H. Park, I. K. Yoo,
I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. I.
Chung, J. T. Moon, and B. I. Ryu, "Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films," Appl. Phys. Lett., vol. 88, p. 202102, May 2006.
[3] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The
missing memristor found," Nature, vol. 453, pp. 80-83, May 2008.
[4] R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J.
Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, and H. Hwang,
"Reproducible hysteresis and resistive switching in metal- Cux O -metal
heterostructures," Appl. Phys. Lett., vol. 90, p. 042107, Jan 2007.
[5] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C.
H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed
bipolar switching with a thin reactive ti buffer layer in robust HfO2
based RRAM," in IEDM Tech. Dig., 2008, pp. 297-300.
[6] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, "A unified physical model of switching behavior in oxide-based
RRAM," in VLSI Symp., 2008, pp. 100-101.
[7] C. Kittel, "Introduction to solid state physics (8th ed)," pp. 585-591.
[8] R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez,
and D. Rinerson, "Oxide dual-layer memory element for scalable nonvolatile
cross-point memory technology," in NVMTS Proc., 2008, pp. 1-
5
[1] G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E.
Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S.
Kim, I. K. Yoo, U. I. Chung, J. T. Moon, and B. I. Ryu, "Multi-layer
cross-point binary oxide resistive memory (OxRRAM) for post-NAND
storage application," in IEDM Tech. Dig., 2005, pp. 750-753.
[2] D. C. Kim, S. Seo, S. E. Ahn, D. S. Suh, M. J. Lee, B. H. Park, I. K. Yoo,
I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. I.
Chung, J. T. Moon, and B. I. Ryu, "Electrical observations of
filamentary conductions for the resistive memory switching in NiO
films," Appl. Phys. Lett., vol. 88, p. 202102, May 2006.
[3] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The
missing memristor found," Nature, vol. 453, pp. 80-83, May 2008.
[4] R. Dong, D. S. Lee, W. F. Xiang, S. J. Oh, D. J. Seong, S. H. Heo, H. J.
Choi, M. J. Kwon, S. N. Seo, M. B. Pyun, M. Hasan, and H. Hwang,
"Reproducible hysteresis and resistive switching in metal- Cux O -metal
heterostructures," Appl. Phys. Lett., vol. 90, p. 042107, Jan 2007.
[5] H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C.
H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, "Low power and high speed
bipolar switching with a thin reactive ti buffer layer in robust HfO2
based RRAM," in IEDM Tech. Dig., 2008, pp. 297-300.
[6] N. Xu, B. Gao, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, and
B. Yu, "A unified physical model of switching behavior in oxide-based
RRAM," in VLSI Symp., 2008, pp. 100-101.
[7] C. Kittel, "Introduction to solid state physics (8th ed)," pp. 585-591.
[8] R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez,
and D. Rinerson, "Oxide dual-layer memory element for scalable nonvolatile
cross-point memory technology," in NVMTS Proc., 2008, pp. 1-
5
@article{"International Journal of Electrical, Electronic and Communication Sciences:50448", author = "Z. Fang and H.Y. Yu and W.J. Liu and N. Singh and G.Q. Lo", title = "Resistive RAM Based on Hfox and its Temperature Instability Study", abstract = "High performance Resistive Random Access Memory
(RRAM) based on HfOx has been prepared and its temperature
instability has been investigated in this work. With increasing
temperature, it is found that: leakage current at high resistance state
increases, which can be explained by the higher density of traps
inside dielectrics (related to trap-assistant tunneling), leading to a
smaller On/Off ratio; set and reset voltages decrease, which may be
attributed to the higher oxygen ion mobility, in addition to the
reduced potential barrier to create / recover oxygen ions (or oxygen
vacancies); temperature impact on the RRAM retention degradation
is more serious than electrical bias.", keywords = "RRAM, resistive switching, temperature instability.", volume = "4", number = "12", pages = "1705-3", }