Piezoelectric Polarization Effect on Debye Frequency and Temperature in Nitride Wurtzites
We have investigated the effect of piezoelectric (PZ)
polarization property in binary as well as in ternary wurtzite nitrides.
It is found that with the presence of PZ polarization property, the
phonon group velocity is modified. The change in phonon group
velocity due to PZ polarization effect directly depends on
piezoelectric tensor value. Using different piezoelectric tensor values
recommended by different workers in the literature, percent change in
group velocities of phonons has been estimated. The Debye
temperatures and frequencies of binary nitrides GaN, AlN and InN
are also calculated using the modified group velocities. For ternary
nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group
velocities have been calculated as a functions of composition. A
small positive bowing is observed in phonon group velocities of
ternary alloys. Percent variations in phonon group velocities are also
calculated for a straightforward comparison among ternary nitrides.
The results are expected to show a change in phonon relaxation rates
and thermal conductivity of III-nitrides when piezoelectric
polarization property is taken into consideration.
[1] V.O Turin and A.A Balandin Electron Lett 40, 81(2004)
[2] A.ABalandin , S.V Morozov, Cai S, Li R., KLWang , G Wijeratne, CR
Viswanathan IEEE Trans Microwave Theory Tech 47, 413(1999)
[3] R. Gaska, A. Osinsky, J.W Yang , and M.S Shur IEEE Electron
Device Lett 19, 89 (1998)
[4] L.F Eastman, V. Tilak, J. Smart, B. M. Green, Chumbes EM, Dimitrov
R, Hyungtak Kim, Ambacher OS, Weimann N, Prunty T, Murphy M,
Scaff WJ, and Shealy JR IEEE Trans Electron Devices 48, 479(2001)
[5] Yen-Kuang Kuo, Miao-Chan Tsai, Sheng-Horng Yen, Ta-Cheng Hsu,
and Yu-Jiu Shen IEEE Journal of Quantum Electronics 46, 1214(2010)
[6] E.K Sichel, J.I Pankove J Phys Chem Solids 38, 330 (1997)
[7] C.L Lou, H. Marchand , D.R Clarke , and S.P DenBaars Appl Phys
Lett 75, 89 (1998)
[8] D.I Florescu, V.M Asnin , F.H Pollak , A.M Jones, J.C Ramer, J. M
Schurman, I. Ferguson Appl Phys Lett 77, 1464(2000)
[9] B.C Daly, H. J. Maris, A. V. Numikko, M. Kuball, J. Han J Appl Phys
92, 3820(2002)
[10] S. Adachi J Appl Phys 102, 063502(2007)
[11] D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florscu, F. H. Pollak Appl
Phys Lett 79, 4316(2001)
[12] J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florscu, F. H. Pollak, J
Appl Phys 92, 2534 (2002)
[13] J. Callaway, Phys Rev 113, 1046 (1959)
[14] P. G. Klemens, In: Seitz F, Turnbull D (eds) Solid state physics, Vol.7.
Academic, New York (1958)
[15] F. Bernardini, V. Fiorentini Phys Stat Sol B 216, 391 (1999)
[16] O. Ambacher, J. Smart, J. R. Shealy, N. Weimann, Chu k, Murphy M,
Scaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger
W, Kilsenbeck J J Appl Phys 85, 3222(1999)
[17] A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck J Appl Phys 100,
023522(2006)
[18] I. Vurgaftman, J. R. Meywer J Appl Phys 94, 3675 (2003)
[19] F. Bernardini, V. Fiorentini Phys Rev B 64, 08520(2001)
[20] M. Balkanski, R. F. Wallis In: Semiconductor Physics and
Application Oxford University Press Inc., New York, (2000).
[21] M. Feneberg, K. J. Thonke Phys: Condensed. Matter 19, 403201(2007)
[22] J. Wu J Appl Phys 106, 011101(2009)
[23] I. L. Guy, S. Muensit, E. M. Goldys Appl Phys Lett 75, 4133 (1999)
[24] S. Muensit, E. M. Goldys, I. L. Guy Appl Phys Lett 75, 3965(1999)
[25] O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M.
Eickhoff, M. Stutzmann, Bernardini F, Fiorentini V , Tilak V, M, Scaff
WJ, Eastman LF J. Phys: Condensed. Matter 14, 3399 (2002)
[1] V.O Turin and A.A Balandin Electron Lett 40, 81(2004)
[2] A.ABalandin , S.V Morozov, Cai S, Li R., KLWang , G Wijeratne, CR
Viswanathan IEEE Trans Microwave Theory Tech 47, 413(1999)
[3] R. Gaska, A. Osinsky, J.W Yang , and M.S Shur IEEE Electron
Device Lett 19, 89 (1998)
[4] L.F Eastman, V. Tilak, J. Smart, B. M. Green, Chumbes EM, Dimitrov
R, Hyungtak Kim, Ambacher OS, Weimann N, Prunty T, Murphy M,
Scaff WJ, and Shealy JR IEEE Trans Electron Devices 48, 479(2001)
[5] Yen-Kuang Kuo, Miao-Chan Tsai, Sheng-Horng Yen, Ta-Cheng Hsu,
and Yu-Jiu Shen IEEE Journal of Quantum Electronics 46, 1214(2010)
[6] E.K Sichel, J.I Pankove J Phys Chem Solids 38, 330 (1997)
[7] C.L Lou, H. Marchand , D.R Clarke , and S.P DenBaars Appl Phys
Lett 75, 89 (1998)
[8] D.I Florescu, V.M Asnin , F.H Pollak , A.M Jones, J.C Ramer, J. M
Schurman, I. Ferguson Appl Phys Lett 77, 1464(2000)
[9] B.C Daly, H. J. Maris, A. V. Numikko, M. Kuball, J. Han J Appl Phys
92, 3820(2002)
[10] S. Adachi J Appl Phys 102, 063502(2007)
[11] D. Kotchetkov, J. Zou, A. A. Balandin, D. I. Florscu, F. H. Pollak Appl
Phys Lett 79, 4316(2001)
[12] J. Zou, D. Kotchetkov, A. A. Balandin, D. I. Florscu, F. H. Pollak, J
Appl Phys 92, 2534 (2002)
[13] J. Callaway, Phys Rev 113, 1046 (1959)
[14] P. G. Klemens, In: Seitz F, Turnbull D (eds) Solid state physics, Vol.7.
Academic, New York (1958)
[15] F. Bernardini, V. Fiorentini Phys Stat Sol B 216, 391 (1999)
[16] O. Ambacher, J. Smart, J. R. Shealy, N. Weimann, Chu k, Murphy M,
Scaff WJ, Eastman LF, Dimitrov R, Wittmer L, Stutzmann M, Rieger
W, Kilsenbeck J J Appl Phys 85, 3222(1999)
[17] A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck J Appl Phys 100,
023522(2006)
[18] I. Vurgaftman, J. R. Meywer J Appl Phys 94, 3675 (2003)
[19] F. Bernardini, V. Fiorentini Phys Rev B 64, 08520(2001)
[20] M. Balkanski, R. F. Wallis In: Semiconductor Physics and
Application Oxford University Press Inc., New York, (2000).
[21] M. Feneberg, K. J. Thonke Phys: Condensed. Matter 19, 403201(2007)
[22] J. Wu J Appl Phys 106, 011101(2009)
[23] I. L. Guy, S. Muensit, E. M. Goldys Appl Phys Lett 75, 4133 (1999)
[24] S. Muensit, E. M. Goldys, I. L. Guy Appl Phys Lett 75, 3965(1999)
[25] O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M.
Eickhoff, M. Stutzmann, Bernardini F, Fiorentini V , Tilak V, M, Scaff
WJ, Eastman LF J. Phys: Condensed. Matter 14, 3399 (2002)
@article{"International Journal of Engineering, Mathematical and Physical Sciences:50015", author = "Bijay Kumar Sahoo and Ashok Kumar Srivastav", title = "Piezoelectric Polarization Effect on Debye Frequency and Temperature in Nitride Wurtzites", abstract = "We have investigated the effect of piezoelectric (PZ)
polarization property in binary as well as in ternary wurtzite nitrides.
It is found that with the presence of PZ polarization property, the
phonon group velocity is modified. The change in phonon group
velocity due to PZ polarization effect directly depends on
piezoelectric tensor value. Using different piezoelectric tensor values
recommended by different workers in the literature, percent change in
group velocities of phonons has been estimated. The Debye
temperatures and frequencies of binary nitrides GaN, AlN and InN
are also calculated using the modified group velocities. For ternary
nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group
velocities have been calculated as a functions of composition. A
small positive bowing is observed in phonon group velocities of
ternary alloys. Percent variations in phonon group velocities are also
calculated for a straightforward comparison among ternary nitrides.
The results are expected to show a change in phonon relaxation rates
and thermal conductivity of III-nitrides when piezoelectric
polarization property is taken into consideration.", keywords = "Wirtzite nitrides, piezoelectric polarization, Phonon
group velocity, Debye frequency and Debye temperature.", volume = "6", number = "5", pages = "503-5", }