Ultra-Low Loss Dielectric Properties of (Mg1-xNix)2(Ti0.95Sn0.05)O4 Microwave Ceramics

Microwave dielectric ceramic materials of
(Mg1-xNix)2(Ti0.95Sn0.05)O4 for x = 0.01, 0.03, 0.05, 0.07 and 0.09 were
prepared and sintered at 1250–1400 ºC. The microstructure and
microwave dielectric properties of the ceramic materials were
examined and measured. The observations shows that the content of
Ni2+ ions has little effect on the crystal structure, dielectric constant,
temperature coefficient of resonant frequency (τf) and sintering
temperatures of the ceramics. However, the quality values (Q×f) are
greatly improved due to the addition of Ni2+ ions. The present study
showed that the ceramic material prepared for x = 0.05 and sintered at
1325ºC had the best Q×f value of 392,000 GHz, about 23%
improvement compared with that of Mg2(Ti0.95Sn0.05)O4.

• Bing-Jing Li
• Sih-Yin Wang
• Tse-Chun Yeh
• Yuan-Bin Chen

• (Mg1-xNix)2(Ti0.95Sn0.05)O4
• microwave dielectric ceramics
• high quality factor
• high frequency wireless communication.

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