Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method
The progress of industry integrated circuits in recent
years has been pushed by continuous miniaturization of transistors.
With the reduction of dimensions of components at 0.1 micron and
below, new physical effects come into play as the standard simulators
of two dimensions (2D) do not consider. In fact the third dimension
comes into play because the transverse and longitudinal dimensions
of the components are of the same order of magnitude. To describe
the operation of such components with greater fidelity, we must
refine simulation tools and adapted to take into account these
phenomena. After an analytical study of the static characteristics of
the component, according to the different operating modes, a
numerical simulation is performed of field-effect transistor with
submicron gate MESFET GaInP. The influence of the dimensions of
the gate length is studied. The results are used to determine the
optimal geometric and physical parameters of the component for their
specific applications and uses.
[1] Kittel, Physique de l’etat solide, Ed. Dunod Université (1983) 287,325
[2] Gerald Bastard, Wave mechanics applied to semiconductor
heterostructures, Les editions de physique, Paris, (1988).
[3] CAPPY. A, Propriétés physiques et performances potentielles des
composants submicroniques à effet de champ : structures
conventionnelles et à gaz d’électrons, Thèse d’état, Université de Lille
France. (1986).
[4] F. D. Murnaghan, Proc. Natl. Acad. Sci. USA 30, 244 (1944).
[5] KITTEL C., Physique de l’état solide - 7ème édition, Dunod, 1998.
[6] A. ElFatimy. Détection et Emission Terahertz par les ondes de plasma
dans des transistors HEMT à base d’hétérostructures GaN/AlGaN et
InGaAs/InAlAs, Montepelier. Juin 2007
[7] M. Elmoufakkir, Etude des propriétés optiques dans l'infrarouge
lointain des hétérostructures à base de semi conducteurs Gaas/ Algaas
modèle de la fonction diélectrique. Université Sidi Mohamed Ben
Abdellah faculté des sciences Dhar El Mehraz Fès Maroc 2012
[8] Peter Y.YU, Manuel Cardona. Fundamentals of semiconductors Physics
and materials properties. Springer (2001).
[9] Gerald Bastard, Wave mechanics applied to semiconductor
heterostructures, Les éditions de physique, paris, (1988). [10] Henri Alloul, physique des électrons dans les solides, de l’ecole
polytechnique – Septembre 2007
[11] Dargys A. and J. Kundrotas Handbook on Physical Properties of Ge, Si,
GaAs and InP, Vilnius, Science and Encyclopedia Publishers, 1994
[12] BRU, C., Simulation par Monte Carlo Doctorat d'Etat, Orsay (1988)
[13] S. M. Sze, « physic of semiconductor devices », Ed. INC. J.Willy et
Sons, New York 1981.
[14] P. Y. Yu et M. Cardona. Fundamentals of semiconductors Physics and
materials properties. Graduate Texts in Physics. Springer, 2010. (Cité en
pages 24, 25, 33 et 161.)
[15] Effets de la compensation du dopage sur les propriétés électriques du
silicium et sur les performances photovoltaïques des cellules à base de
silicium solaire purifié par voie métallurgique N° d’ordre
2011ISAL0111 Année 2011
[16] B. L. Altshuler, A.G. Aronov, and D.E. Khmelnitsky. Solid State
Comm., 39:619, 1981.
[17] K. Rim. 32 nm and beyond transistor enhancements Mobility
enhancement. 2007. IEDM short course
[18] Guidoni, L., C. Triché, P. Verkerk & G. Grynberg (1997), «
Quasiperiodic Optical Lattices », in Phys. Rev. Lett. 79 (18), pp. 3363–
3366.
[19] N.W. Ashcroft and N.D. Mermin. Solid States Physics. 1976.
[20] M. Lundstrom. Fundamentals of carrier transport. 2000.
[21] J.M. Ziman. Principles of the Theory of solids. 1972.
[22] HESTO, P.t Doctorat d'Etat, Orsay (1984).
[1] Kittel, Physique de l’etat solide, Ed. Dunod Université (1983) 287,325
[2] Gerald Bastard, Wave mechanics applied to semiconductor
heterostructures, Les editions de physique, Paris, (1988).
[3] CAPPY. A, Propriétés physiques et performances potentielles des
composants submicroniques à effet de champ : structures
conventionnelles et à gaz d’électrons, Thèse d’état, Université de Lille
France. (1986).
[4] F. D. Murnaghan, Proc. Natl. Acad. Sci. USA 30, 244 (1944).
[5] KITTEL C., Physique de l’état solide - 7ème édition, Dunod, 1998.
[6] A. ElFatimy. Détection et Emission Terahertz par les ondes de plasma
dans des transistors HEMT à base d’hétérostructures GaN/AlGaN et
InGaAs/InAlAs, Montepelier. Juin 2007
[7] M. Elmoufakkir, Etude des propriétés optiques dans l'infrarouge
lointain des hétérostructures à base de semi conducteurs Gaas/ Algaas
modèle de la fonction diélectrique. Université Sidi Mohamed Ben
Abdellah faculté des sciences Dhar El Mehraz Fès Maroc 2012
[8] Peter Y.YU, Manuel Cardona. Fundamentals of semiconductors Physics
and materials properties. Springer (2001).
[9] Gerald Bastard, Wave mechanics applied to semiconductor
heterostructures, Les éditions de physique, paris, (1988). [10] Henri Alloul, physique des électrons dans les solides, de l’ecole
polytechnique – Septembre 2007
[11] Dargys A. and J. Kundrotas Handbook on Physical Properties of Ge, Si,
GaAs and InP, Vilnius, Science and Encyclopedia Publishers, 1994
[12] BRU, C., Simulation par Monte Carlo Doctorat d'Etat, Orsay (1988)
[13] S. M. Sze, « physic of semiconductor devices », Ed. INC. J.Willy et
Sons, New York 1981.
[14] P. Y. Yu et M. Cardona. Fundamentals of semiconductors Physics and
materials properties. Graduate Texts in Physics. Springer, 2010. (Cité en
pages 24, 25, 33 et 161.)
[15] Effets de la compensation du dopage sur les propriétés électriques du
silicium et sur les performances photovoltaïques des cellules à base de
silicium solaire purifié par voie métallurgique N° d’ordre
2011ISAL0111 Année 2011
[16] B. L. Altshuler, A.G. Aronov, and D.E. Khmelnitsky. Solid State
Comm., 39:619, 1981.
[17] K. Rim. 32 nm and beyond transistor enhancements Mobility
enhancement. 2007. IEDM short course
[18] Guidoni, L., C. Triché, P. Verkerk & G. Grynberg (1997), «
Quasiperiodic Optical Lattices », in Phys. Rev. Lett. 79 (18), pp. 3363–
3366.
[19] N.W. Ashcroft and N.D. Mermin. Solid States Physics. 1976.
[20] M. Lundstrom. Fundamentals of carrier transport. 2000.
[21] J.M. Ziman. Principles of the Theory of solids. 1972.
[22] HESTO, P.t Doctorat d'Etat, Orsay (1984).
@article{"International Journal of Mechanical, Industrial and Aerospace Sciences:69089", author = "N. Massoum and A. Guen. Bouazza and B. Bouazza and A. El Ouchdi", title = "Modeling the Transport of Charge Carriers in the Active Devices MESFET, Based of GaInP by the Monte Carlo Method", abstract = "The progress of industry integrated circuits in recent
years has been pushed by continuous miniaturization of transistors.
With the reduction of dimensions of components at 0.1 micron and
below, new physical effects come into play as the standard simulators
of two dimensions (2D) do not consider. In fact the third dimension
comes into play because the transverse and longitudinal dimensions
of the components are of the same order of magnitude. To describe
the operation of such components with greater fidelity, we must
refine simulation tools and adapted to take into account these
phenomena. After an analytical study of the static characteristics of
the component, according to the different operating modes, a
numerical simulation is performed of field-effect transistor with
submicron gate MESFET GaInP. The influence of the dimensions of
the gate length is studied. The results are used to determine the
optimal geometric and physical parameters of the component for their
specific applications and uses.
", keywords = "Monte Carlo simulation, transient electron transport,
MESFET device.", volume = "9", number = "1", pages = "134-4", }
