Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode
Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.
[1] Z. Ahmad, and M. H. Sayyad, "Extraction of electronic parameters of
Schottky diode based on an organic semiconductor methyl-red," Phys.
E. vol. 41, pp. 631-634, Feb. 2009.
[2] F. Yakuphanoglu, "Determination of electronic properties of Al/p-
Si/composite organic semiconductor (MIOS) junction barrier by
current-voltage and capacitance-voltage methods," Synth. Met. vol. 158,
pp. 108-112, 2008.
[3] M. H. Sayyad, Muhammad Saleem, Khasan S. Karimov, Muhammad
Yaseen, Mukhtar Ali, Kuan Y. Cheong, and Ahmad F. Mohd Noor,
"Synthesis of Zn(II) 5,10,15,20-tetrakis(4ÔÇ▓-isopropylphenyl) porphyrin
and its use as a thin film sensor," Appl. Phys. A. vol. 98, pp. 103-109,
2010.
[4] C. J. Brabec, and V. Dyakonov, "Organic Photovoltaics Concepts and
Realization," (Springer) 2003.
[5] K. S. Karimov, Ibrahim Qazi, M. Mahroof Tahir, Tauseef Ahmed Khan,
and Umar Shafique, "Photo Organic Field Effect Transistor-s
Properties," Turk. J. Phys. vol. 32, pp. 13-19, 2008.
[6] M. H. Sayyad, Zubair Ahmad, Kh. S. Karimov, Muhammad Yaseen,
and Mukhtar Ali, "Photo organic field effect transistor based on a
metallo-porphyrin," J. Phys. D. Appl. Phys. vol. 42, pp. 105-112, 2009.
[7] C. X. Qiang, Wei Wan-yin, Wu You-yu, Dong Mao-jun, and Zhang Fu-
Jia, "Fabrication of a white organic light-emitting device with single
liq:rubrence luminescent layer," Optoelectron. Lett. vol. 4, pp. 126-129,
2008.
[8] Anatoliy N. Sokolov, Mark E. Roberts, and Zhenan Bao, "Fabrication of
low-cost electronic biosensors," Mater. Today. vol. 12, pp. 12-20, 2009.
[9] R. K. Gupta, and R. A. Singh, "Schottky diode based on composite
organic semiconductors," Mater. Sci. in Semicond. Process. vol. 7, pp.
83-87, 2004.
[10] O. Gullu, S. Aydo─ƒana, and A. T├╝r├╝t, "Fabrication and electrical
characteristics of Schottky diode based on organic material,"
Microelectron. Eng. 85, pp. 1647-1651, 2008.
[11] T. K─▒l─▒coglu, "Effect of an organic compound (Methyl Red) interfacial
layer on the calculation of characteristic parameters of an Al/Methyl
Red/p-Si sandwich Schottky barrier diode," Thin Solid Films. vol. 516,
[12] M. Cakar, Cabir Temirci, and Abdulmecit T├╝r├╝t, "Determination of the
Density Distribution of Interface States from High- and Low-Frequency
Capacitance Characteristics of the Tin/Organic Pyronine-B/p-type
Silicon Structure," Chem. Phys. Chem. vol. 3, pp. 701-704, 2002.
[13] E. H. Rhoderick, and R.H. Williams Metal Semiconductor Contacts,
second ed. (Oxford, Clarendon) 1988.
[14] S. M. Sze Physics of Semiconductor Devices, Second ed. (Jon Wiley &
Sons, Inc.) 1981.
[15] S. S. Islam Smiconductor Physics and Devices, (Oxford University
Press, New Delhi) 2006.
[16] C. R. Crowell, and S. M. Sze, "Current transport in metalsemiconductor
barriers," Solid-State Electron.vol. 9, pp. 1035-1048,
1966.
[17] K. Akk─▒l─▒c, lhan Uzunb, and Tahsin K─▒l─▒coglu, "The calculation of
electronic properties of an Ag/chitosan/n-Si Schottky barrier diode,"
Synth. Met.vol. 157, pp. 297-302, 2007.
[18] S. A. E. Ugurel, K. Serifoglu, and A. Turut, "Effect of 6 MeV electron
irradiation on electrical characteristics of Au/n-Si/Al Schottky diode,"
Microelectron. Eng. vol. 85, pp. 2299-2303, 2008.
[19] S. K. Cheung, and N. W. Cheung, "Extraction of Schottky diode
parameters from forward current-voltage characteristics," Appl. Phys.
Lett. vol. 49, pp. 85-87, 1986.
[1] Z. Ahmad, and M. H. Sayyad, "Extraction of electronic parameters of
Schottky diode based on an organic semiconductor methyl-red," Phys.
E. vol. 41, pp. 631-634, Feb. 2009.
[2] F. Yakuphanoglu, "Determination of electronic properties of Al/p-
Si/composite organic semiconductor (MIOS) junction barrier by
current-voltage and capacitance-voltage methods," Synth. Met. vol. 158,
pp. 108-112, 2008.
[3] M. H. Sayyad, Muhammad Saleem, Khasan S. Karimov, Muhammad
Yaseen, Mukhtar Ali, Kuan Y. Cheong, and Ahmad F. Mohd Noor,
"Synthesis of Zn(II) 5,10,15,20-tetrakis(4ÔÇ▓-isopropylphenyl) porphyrin
and its use as a thin film sensor," Appl. Phys. A. vol. 98, pp. 103-109,
2010.
[4] C. J. Brabec, and V. Dyakonov, "Organic Photovoltaics Concepts and
Realization," (Springer) 2003.
[5] K. S. Karimov, Ibrahim Qazi, M. Mahroof Tahir, Tauseef Ahmed Khan,
and Umar Shafique, "Photo Organic Field Effect Transistor-s
Properties," Turk. J. Phys. vol. 32, pp. 13-19, 2008.
[6] M. H. Sayyad, Zubair Ahmad, Kh. S. Karimov, Muhammad Yaseen,
and Mukhtar Ali, "Photo organic field effect transistor based on a
metallo-porphyrin," J. Phys. D. Appl. Phys. vol. 42, pp. 105-112, 2009.
[7] C. X. Qiang, Wei Wan-yin, Wu You-yu, Dong Mao-jun, and Zhang Fu-
Jia, "Fabrication of a white organic light-emitting device with single
liq:rubrence luminescent layer," Optoelectron. Lett. vol. 4, pp. 126-129,
2008.
[8] Anatoliy N. Sokolov, Mark E. Roberts, and Zhenan Bao, "Fabrication of
low-cost electronic biosensors," Mater. Today. vol. 12, pp. 12-20, 2009.
[9] R. K. Gupta, and R. A. Singh, "Schottky diode based on composite
organic semiconductors," Mater. Sci. in Semicond. Process. vol. 7, pp.
83-87, 2004.
[10] O. Gullu, S. Aydo─ƒana, and A. T├╝r├╝t, "Fabrication and electrical
characteristics of Schottky diode based on organic material,"
Microelectron. Eng. 85, pp. 1647-1651, 2008.
[11] T. K─▒l─▒coglu, "Effect of an organic compound (Methyl Red) interfacial
layer on the calculation of characteristic parameters of an Al/Methyl
Red/p-Si sandwich Schottky barrier diode," Thin Solid Films. vol. 516,
[12] M. Cakar, Cabir Temirci, and Abdulmecit T├╝r├╝t, "Determination of the
Density Distribution of Interface States from High- and Low-Frequency
Capacitance Characteristics of the Tin/Organic Pyronine-B/p-type
Silicon Structure," Chem. Phys. Chem. vol. 3, pp. 701-704, 2002.
[13] E. H. Rhoderick, and R.H. Williams Metal Semiconductor Contacts,
second ed. (Oxford, Clarendon) 1988.
[14] S. M. Sze Physics of Semiconductor Devices, Second ed. (Jon Wiley &
Sons, Inc.) 1981.
[15] S. S. Islam Smiconductor Physics and Devices, (Oxford University
Press, New Delhi) 2006.
[16] C. R. Crowell, and S. M. Sze, "Current transport in metalsemiconductor
barriers," Solid-State Electron.vol. 9, pp. 1035-1048,
1966.
[17] K. Akk─▒l─▒c, lhan Uzunb, and Tahsin K─▒l─▒coglu, "The calculation of
electronic properties of an Ag/chitosan/n-Si Schottky barrier diode,"
Synth. Met.vol. 157, pp. 297-302, 2007.
[18] S. A. E. Ugurel, K. Serifoglu, and A. Turut, "Effect of 6 MeV electron
irradiation on electrical characteristics of Au/n-Si/Al Schottky diode,"
Microelectron. Eng. vol. 85, pp. 2299-2303, 2008.
[19] S. K. Cheung, and N. W. Cheung, "Extraction of Schottky diode
parameters from forward current-voltage characteristics," Appl. Phys.
Lett. vol. 49, pp. 85-87, 1986.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:51583", author = "Muhammad Tahir and Muhammad H. Sayyad and Dil N. Khan and Fazal Wahab", title = "Fabrication and Characterization of Al/Methyl Orange/n-Si Heterojunction Diode", abstract = "Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.", keywords = "Electrical properties, Organic/inorganic
heterojunction diode, Methyl Orange, Cheungs Functions", volume = "6", number = "1", pages = "28-4", }
