Experimental Investigation of Adjacent Hall Structures Parameters
Adjacent Hall microsensors, comprising a silicon
substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage
related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in
the micro scale which is also compared to a single Hall plate.
[1] Z. B. Randjelovic, M. Kayal, R. Popovic and H. Blanchard "Highly Sensitive Hall Magnetic Sensor Microsystem in CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 37, No 2, 2002, pp. 151-159.
[2] S. Lozanova, Ch. Roumenin "A novel parallel-field double - Hall
microsensor with self-reduced offset and temperature drift", Science
Direct, Procedia Engineering 5, 2012, pp. 617-620.
[3] C. S. Roumenin "Solid State Magnetic Sensor", Handbook of Sensors
and Actuators, Vol. 2, Elsevier, 1994.
[4] C. Roumenin, S. Noykov, S. Lozanova "Three Contact Parallel-Field
Hall Microsensor With Dinamically Reduced Offset And 1/f Noise",
Comptes rendus de l-Academie bulgare des Sciences, Vol. 63, No. 4,
2012, pp. 609-615.
[1] Z. B. Randjelovic, M. Kayal, R. Popovic and H. Blanchard "Highly Sensitive Hall Magnetic Sensor Microsystem in CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 37, No 2, 2002, pp. 151-159.
[2] S. Lozanova, Ch. Roumenin "A novel parallel-field double - Hall
microsensor with self-reduced offset and temperature drift", Science
Direct, Procedia Engineering 5, 2012, pp. 617-620.
[3] C. S. Roumenin "Solid State Magnetic Sensor", Handbook of Sensors
and Actuators, Vol. 2, Elsevier, 1994.
[4] C. Roumenin, S. Noykov, S. Lozanova "Three Contact Parallel-Field
Hall Microsensor With Dinamically Reduced Offset And 1/f Noise",
Comptes rendus de l-Academie bulgare des Sciences, Vol. 63, No. 4,
2012, pp. 609-615.
@article{"International Journal of Electrical, Electronic and Communication Sciences:50845", author = "Ivelina N. Cholakova and Tihomir B. Takov and Radostin Ts. Tsankov and Nicolas Simonne and Slavka S. Tzanova", title = "Experimental Investigation of Adjacent Hall Structures Parameters", abstract = "Adjacent Hall microsensors, comprising a silicon
substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage
related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in
the micro scale which is also compared to a single Hall plate.", keywords = "Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.", volume = "6", number = "11", pages = "1253-4", }