Experimental Investigation of Adjacent Hall Structures Parameters

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Authors:

• Ivelina N. Cholakova
• Tihomir B. Takov
• Radostin Ts. Tsankov
• Nicolas Simonne
• Slavka S. Tzanova

Keywords:

• Adjacent Hall sensors
• offset compensation
• voltage related sensitivity
• 0.18μm CMOS technology.

References:

[1] Z. B. Randjelovic, M. Kayal, R. Popovic and H. Blanchard "Highly Sensitive Hall Magnetic Sensor Microsystem in CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 37, No 2, 2002, pp. 151-159.
[2] S. Lozanova, Ch. Roumenin "A novel parallel-field double - Hall
microsensor with self-reduced offset and temperature drift", Science
Direct, Procedia Engineering 5, 2012, pp. 617-620.
[3] C. S. Roumenin "Solid State Magnetic Sensor", Handbook of Sensors
and Actuators, Vol. 2, Elsevier, 1994.
[4] C. Roumenin, S. Noykov, S. Lozanova "Three Contact Parallel-Field
Hall Microsensor With Dinamically Reduced Offset And 1/f Noise",
Comptes rendus de l-Academie bulgare des Sciences, Vol. 63, No. 4,
2012, pp. 609-615.