Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel
n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.
[1] Zhao Z., Morel D. L. and Ferekides C. S. "Electrical and optical
properties of tin-doped CdO films deposited by atmospheric
metalorganic chemical vapor deposition," Thin Solid Films, vol. 413,
2002, pp. 203-211.
[2] Su L. M., Grote N. and Schmitt F. "Diffused planar InP bipolar
transistor with a cadmium oxide film emitter" Electron. Lett., vol. 20,
1984, pp. 716-717.
[3] Gomez Daza O., Arias-Carbajal Readigos A., Campos J., Nair M. T. S.
and Nair P. K. "Formation of Conductive CdO Thin Films on
Photoconductive CdS Thin films for Window Layer Applications in
Solar Cells" Mod. Phys. Lett. B, vol. 17, 2001, pp. 609-612.
[4] Yan M., Lane M., Kannewurf C. R. and Chang R. P. H. "Highly
conductive epitaxial CdO thin films prepared by pulsed laser
deposition" Appl. Phys. Lett., vol.78, 2001,pp. 02342.
[5] Siraj K., Khaleeq-ur-Rahman M., Hussain S.I., Rafique M.S., Anjum
S. "Effect of deposition temperature on structural, surface, optical and
magnetic properties of pulsed laser deposited Al-doped CdO thin
films," J. Alloy Compd., vol. 509, 2011, pp. 6756-6762.
[6] Saha B., Thapa R., Chattopadhyay K.K. "Wide range tuning of
electrical conductivity of RF sputtered CdO thin films through oxygen
partial pressure variation," Sol. Energ. Mat.Sol. C., vol. 92, 2008, pp.
1077-1080.
[7] Zhao Z., Morel D.L., Ferekides C.S. "Electrical and optical properties
of tin-doped CdO films deposited by atmospheric metalorganic
chemical vapor deposition," Thin Solid Films, vol. 413, 2002, pp. 203-
211.
[8] Eze F.C., "Oxygen partial pressure dependence of the structural
properties of CdO thin films deposited by a modified reactive vacuum
evaporation process," Mater. Chem. Phys., vol. 89, 2005, pp. 205-209.
[9] Vigil O., Cruz F., Morales-Acevedo A., Contreras-Puente G., Vaillant
L., Santana G. "Structural and optical properties of annealed CdO thin
films prepared by spray pyrolysis," Mater. Chem. Phys, vol. 68, 2001,
pp.249-252.
[10] Aksoy S., Caglar Y., Ilican S., Caglar M., "Effect of heat treatment on
physical properties of CdO films deposited by sol-gel method," Int. J.
Hydrogen Energy, vol. 34, 2009, pp. 5191-5195.
[11] Yakuphanoglu F., "Nanocluster n-CdO thin film by sol-gel for solar
cell applications,", Appl. Surf. Sci., vol. 257, 2010, pp. 1413-1419.
[12] Ilican S., Caglar M., Caglar Y., Yakuphanoglu F., "CdO:Al films
deposited by sol-gel process: a study on their structural and optical
properties,", vol. 3, 2009, pp. 135-140.
[13] Barret C.S., Massalski T.B., Structure of Metals, Pergamon Press,
Oxford, 1980.
[14] Cullity B. D., Stock S. R. "Elements of X-Ray Diffraction" 3rd ed.,
Englewood Cliffs, NJ: Prentice Hall, 2001.
[15] Sze S.M., "Physics of Semiconductor Devices", 2nd ed., Wiley, New
York, 1981.
[16] Norde H., "A modified forward IÔÇÉV plot for Schottky diodes with high
series resistance", J. Appl. Phys., pp.50, 5052, 1979.
[1] Zhao Z., Morel D. L. and Ferekides C. S. "Electrical and optical
properties of tin-doped CdO films deposited by atmospheric
metalorganic chemical vapor deposition," Thin Solid Films, vol. 413,
2002, pp. 203-211.
[2] Su L. M., Grote N. and Schmitt F. "Diffused planar InP bipolar
transistor with a cadmium oxide film emitter" Electron. Lett., vol. 20,
1984, pp. 716-717.
[3] Gomez Daza O., Arias-Carbajal Readigos A., Campos J., Nair M. T. S.
and Nair P. K. "Formation of Conductive CdO Thin Films on
Photoconductive CdS Thin films for Window Layer Applications in
Solar Cells" Mod. Phys. Lett. B, vol. 17, 2001, pp. 609-612.
[4] Yan M., Lane M., Kannewurf C. R. and Chang R. P. H. "Highly
conductive epitaxial CdO thin films prepared by pulsed laser
deposition" Appl. Phys. Lett., vol.78, 2001,pp. 02342.
[5] Siraj K., Khaleeq-ur-Rahman M., Hussain S.I., Rafique M.S., Anjum
S. "Effect of deposition temperature on structural, surface, optical and
magnetic properties of pulsed laser deposited Al-doped CdO thin
films," J. Alloy Compd., vol. 509, 2011, pp. 6756-6762.
[6] Saha B., Thapa R., Chattopadhyay K.K. "Wide range tuning of
electrical conductivity of RF sputtered CdO thin films through oxygen
partial pressure variation," Sol. Energ. Mat.Sol. C., vol. 92, 2008, pp.
1077-1080.
[7] Zhao Z., Morel D.L., Ferekides C.S. "Electrical and optical properties
of tin-doped CdO films deposited by atmospheric metalorganic
chemical vapor deposition," Thin Solid Films, vol. 413, 2002, pp. 203-
211.
[8] Eze F.C., "Oxygen partial pressure dependence of the structural
properties of CdO thin films deposited by a modified reactive vacuum
evaporation process," Mater. Chem. Phys., vol. 89, 2005, pp. 205-209.
[9] Vigil O., Cruz F., Morales-Acevedo A., Contreras-Puente G., Vaillant
L., Santana G. "Structural and optical properties of annealed CdO thin
films prepared by spray pyrolysis," Mater. Chem. Phys, vol. 68, 2001,
pp.249-252.
[10] Aksoy S., Caglar Y., Ilican S., Caglar M., "Effect of heat treatment on
physical properties of CdO films deposited by sol-gel method," Int. J.
Hydrogen Energy, vol. 34, 2009, pp. 5191-5195.
[11] Yakuphanoglu F., "Nanocluster n-CdO thin film by sol-gel for solar
cell applications,", Appl. Surf. Sci., vol. 257, 2010, pp. 1413-1419.
[12] Ilican S., Caglar M., Caglar Y., Yakuphanoglu F., "CdO:Al films
deposited by sol-gel process: a study on their structural and optical
properties,", vol. 3, 2009, pp. 135-140.
[13] Barret C.S., Massalski T.B., Structure of Metals, Pergamon Press,
Oxford, 1980.
[14] Cullity B. D., Stock S. R. "Elements of X-Ray Diffraction" 3rd ed.,
Englewood Cliffs, NJ: Prentice Hall, 2001.
[15] Sze S.M., "Physics of Semiconductor Devices", 2nd ed., Wiley, New
York, 1981.
[16] Norde H., "A modified forward IÔÇÉV plot for Schottky diodes with high
series resistance", J. Appl. Phys., pp.50, 5052, 1979.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:52377", author = "S.Aksoy and Y.Caglar", title = "Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel", abstract = "n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.", keywords = "CdO, heterojunction semiconductor devices, ideality
factor, current-voltage characteristics", volume = "5", number = "11", pages = "1679-4", }