Characterization of the In0.53Ga0.47As n+nn+ Photodetectors

We present an analytical model for the calculation of
the sensitivity, the spectral current noise and the detective parameter
for an optically illuminated In0.53Ga0.47As n+nn+ diode. The
photocurrent due to the excess carrier is obtained by solving the
continuity equation. Moreover, the current noise level is evaluated at
room temperature and under a constant voltage applied between the
diode terminals. The analytical calculation of the current noise in the
n+nn+ structure is developed by considering the free carries
fluctuations. The responsivity and the detection parameter are
discussed as functions of the doping concentrations and the emitter
layer thickness in one-dimensional homogeneous n+nn+ structure.

• Fatima Zohra Mahi
• Luca Varani

• Responsivity
• detection parameter
• photo-detectors
• continuity equation
• current noise.

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