Abstract: This paper presents thermal annealing de-wetting
technique for the preparation of porous metal membrane for Thin
Film Encapsulation (TFE) application. Thermal annealing de-wetting
experimental results reveal that pore size formation in porous metal
membrane depend upon i.e. 1. The substrate at which metal is
deposited, 2. Melting point of metal used for porous metal cap layer
membrane formation, 3. Thickness of metal used for cap layer, 4.
Temperature used for formation of porous metal membrane. In order
to demonstrate this technique, Silver (Ag) was used as a metal for
preparation of porous metal membrane on amorphous silicon (a-Si)
and silicon oxide. The annealing of the silver thin film of various
thicknesses was performed at different temperature. Pores in porous
silver film were analyzed using Scanning Electron Microscope
(SEM). In order to check the usefulness of porous metal film for TFE
application, the porous silver film prepared on amorphous silicon (a-
Si) and silicon oxide was released using XeF2 and VHF, respectively.
Finally, guide line and structures are suggested to use this porous
membrane for robust TFE application.
Abstract: Si ion implantation was widely used to synthesize
specimens of SiO2 containing supersaturated Si and subsequent high
temperature annealing induces the formation of embedded
luminescent Si nanocrystals. In this work, the potentialities of excimer
UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing
(RTA) to enhance the photoluminescence and to achieve low
temperature formation of Si nanocrystals have been investigated. The
Si ions were introduced at acceleration energy of 180 keV to fluence of
7.5 x 1016 ions/cm2. The implanted samples were subsequently
irradiated with an excimer-UV lamp. After the process, the samples
were rapidly thermal annealed before furnace annealing (FA).
Photoluminescence spectra were measured at various stages at the
process. We found that the luminescence intensity is strongly
enhanced with excimer-UV irradiation and RTA. Moreover, effective
visible photoluminescence is found to be observed even after FA at
900 oC, only for specimens treated with excimer-UV lamp and RTA.
We also prepared specimens of Si nanocrystals embedded in a SiO2 by
reactive pulsed laser deposition (PLD) in an oxygen atmosphere. We
will make clear the similarities and differences with the way of
preparation.
Abstract: In this research, n-dodecylthiol was added to P3HT/ PC70BM polymer solar cells to improve the crystallinity of P3HT and enhance the phase separation of P3HT/PC70BM. The improved crystallinity of P3HT:PC70BM doped with 0-5% by volume of n-dodecylthiol resulted in improving the power conversion efficiency of polymer solar cells by 33%. In addition, thermal annealing of the P3HT/PC70MB/n-dodecylthiolcompound showed further improvement in crystallinity with n-dodecylthiol concentration up to 2%. The highest power conversion efficiency of 3.21% was achieved with polymer crystallites size L of 11.2nm, after annealing at 150°C for 30 minutes under a vacuum atmosphere. The smaller crystallite size suggests a shorter path of the charge carriers between P3HT backbones, which could be beneficial to getting a higher short circuit current in the devices made with the additive.
Abstract: This paper presents a comparative study on
Vanadyl Phthalocyanine (VOPc) thin films deposited by thermal
evaporation and spin coating techniques. The samples
were prepared on cleaned glass substrates and annealed at
various temperatures ranging form 95oC to 155oC. To obtain
the morphological and structural properties of VOPc thin
films, X-ray diffraction (XRD) technique and atomic force
microscopy (AFM) have been implied. The AFM topographic
images show a very slight difference in the thermally grown
films, before and after annealing, however best results are
achieved for the spin-cast film annealed at 125oC. The XRD
spectra show no existence of the sharp peaks, suggesting the
material to be amorphous. The humps in the XRD patterns
indicate the presence of some crystallites.