Abstract: The Al-MoO3-P-CdTe-Al MOS sandwich structures
were fabricated by vacuum deposition method on cleaned glass
substrates. Capacitance versus voltage measurements were performed
at different frequencies and sweep rates of applied voltages for oxide
and semiconductor films of different thicknesses. In the negative
voltage region of the C-V curve a high differential capacitance of the
semiconductor was observed and at high frequencies (