International Journal of Electrical, Electronic and Communication Sciences
ISSN: 2517-9438
Total 15 content found
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A Multipurpose Audio Watermarking Algorithm Based on Vector Quantization in DCT Domain
In this paper, a novel multipurpose audio watermarking algorithm is proposed based on Vector Quantization (VQ) in Discrete Cosine Transform (DCT) domain using the codeword labeling and index-bit constrained method. By using this algorithm, it can fulfill the requirements of both the copyright protection and content integrity authentication at the same time for the multimedia artworks. The robust watermark is embedded in the middle frequency coefficients of the DCT transform during the labeled codeword vector quantization procedure. The fragile watermark is embedded into the indices of the high frequency coefficients of the DCT transform by using the constrained index vector quantization method for the purpose of integrity authentication of the original audio signals. Both the robust and the fragile watermarks can be extracted without the original audio signals, and the simulation results show that our algorithm is effective with regard to the transparency, robustness and the authentication requirementsEvolutionary Computing Approach for the Solution of Initial value Problems in Ordinary Differential Equations
An evolutionary computing technique for solving initial value problems in Ordinary Differential Equations is proposed in this paper. Neural network is used as a universal approximator while the adaptive parameters of neural networks are optimized by genetic algorithm. The solution is achieved on the continuous grid of time instead of discrete as in other numerical techniques. The comparison is carried out with classical numerical techniques and the solution is found with a uniform accuracy of MSE ≈ 10-9 .InAlGaN Quaternary Multi-Quantum Wells UVLaser Diode Performance and Characterization
The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.Determination of the Characteristics for Ferroresonance Phenomenon in Electric Power Systems
Ferroresonance is an electrical phenomenon in nonlinear character, which frequently occurs in power system due to transmission line faults and single or more-phase switching on the lines as well as usage of the saturable transformers. In this study, the ferroresonance phenomena are investigated under the modeling of the West Anatolian Electric Power Network of 380 kV in Turkey. The ferroresonance event is observed as a result of removing the loads at the end of the lines. In this sense, two different cases are considered. At first, the switching is applied at 2nd second and the ferroresonance affects are observed between 2nd and 4th seconds in the voltage variations of the phase-R. Hence the ferroresonance and nonferroresonance parts of the overall data are compared with each others using the Fourier transform techniques to show the ferroresonance affects.Organic Thin Film Transistors based Oligothiophine Derivatives using DZ-Dihexyl(quarter- and sexi-)Thiophene
End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys
Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.A Capacitive Sensor Interface Circuit Based on Phase Differential Method
A new interface circuit for capacitive sensor is presented. This paper presents the design and simulation of soil moisture capacitive sensor interface circuit based on phase differential technique. The circuit has been designed and fabricated using MIMOS- 0.35"m CMOS technology. Simulation and test results show linear characteristic from 36 – 52 degree phase difference, representing 0 – 100% in soil moisture level. Test result shows the circuit has sensitivity of 0.79mV/0.10 phase difference, translating into resolution of 10% soil moisture level.A Modified Genetic Based Technique for Solving the Power System State Estimation Problem
Power system state estimation is the process of calculating a reliable estimate of the power system state vector composed of bus voltages' angles and magnitudes from telemetered measurements on the system. This estimate of the state vector provides the description of the system necessary for the operation and security monitoring. Many methods are described in the literature for solving the state estimation problem, the most important of which are the classical weighted least squares method and the nondeterministic genetic based method; however both showed drawbacks. In this paper a modified version of the genetic algorithm power system state estimation is introduced, Sensitivity of the proposed algorithm to genetic operators is discussed, the algorithm is applied to case studies and finally it is compared with the classical weighted least squares method formulation.New Design Methodologies for High Speed Low Power XOR-XNOR Circuits
New methodologies for XOR-XNOR circuits are proposed to improve the speed and power as these circuits are basic building blocks of many arithmetic circuits. This paper evaluates and compares the performance of various XOR-XNOR circuits. The performance of the XOR-XNOR circuits based on TSMC 0.18μm process models at all range of the supply voltage starting from 0.6V to 3.3V is evaluated by the comparison of the simulation results obtained from HSPICE. Simulation results reveal that the proposed circuit exhibit lower PDP and EDP, more power efficient and faster when compared with best available XOR-XNOR circuits in the literature.Increasing the Efficiency of Rake Receivers for Ultra-Wideband Applications
- Aimilia P. Doukeli
- Athanasios S. Lioumpas
- George K. Karagiannidis
- Panayiotis V. Frangos
- P. Takis Mathiopoulos