Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation
This paper presents thermal annealing de-wetting
technique for the preparation of porous metal membrane for Thin
Film Encapsulation (TFE) application. Thermal annealing de-wetting
experimental results reveal that pore size formation in porous metal
membrane depend upon i.e. 1. The substrate at which metal is
deposited, 2. Melting point of metal used for porous metal cap layer
membrane formation, 3. Thickness of metal used for cap layer, 4.
Temperature used for formation of porous metal membrane. In order
to demonstrate this technique, Silver (Ag) was used as a metal for
preparation of porous metal membrane on amorphous silicon (a-Si)
and silicon oxide. The annealing of the silver thin film of various
thicknesses was performed at different temperature. Pores in porous
silver film were analyzed using Scanning Electron Microscope
(SEM). In order to check the usefulness of porous metal film for TFE
application, the porous silver film prepared on amorphous silicon (a-
Si) and silicon oxide was released using XeF2 and VHF, respectively.
Finally, guide line and structures are suggested to use this porous
membrane for robust TFE application.
[1] G. H. Mohamed, The MEMS Handbook, 2nd ed., New York, USA:
Taylor & Francis, 2002.
[2] M. Perlmutter and L. Robin High-Performance, “Low Cost Inertial
MEMS: A Market in Motion!” Position Location and Navigation
Symposium (PLANS), 2012, pp.225-229.
[3] R. R. Tummala and E. J. Rymaszewski “Microelectronics Packaging
Handbook”, 2nd ed., Massachustts, USA: Kluwer Academic Publishers
1989.
[4] K. Najafi, "Micropackaging Technologies for Integrated Microsystems:
Applications to MEMS and MOEMS", Micromaching and
Microfabrication Process Technology VII, Proc. Of SPIE Vol. 4979,
2003, pp.1-19.
[5] Lutz M. Partridge, B. Kim, M. Hopcroft, R. N. Candler, T.W. Kenny,
“MEMS Resonators: Getting the Packaging Right”, in: SEMICONJapan,
2005.
[6] H. Stark and K. Najafi, “A Low-Temperature Thin-Film Electroplated
Metal Vacuum Package”, J. Microelectromech. Syst., vol. 13, 2004, pp.
147–157.
[7] V. Lindroos, M. Tilli, A. Lehto and T. Motooka, Handbook of Silicon
Based MEMS Materials and Technologies, 1st ed., Elsevier, chap 38,
2010, pp. 569-574.
[8] J. L. Pornin, C. Gillot, G. Parat, F. Jacquet, E. Lagoutte, N. Sillon, G.
Poupon, F. Dumont, “Wafer Level Thin Film Encapsulation for BAW
RF MEMS.”, Electronic Components and Technology Conference,
2007, pp. 605-609.
[9] C. Gillot, J.L. Pornin, A. Amaud, E. Lagoutte, N.Sillon, J.C. Souriau,
“Wafer Level Thin Film Encapsulation for MEMS”, Electronic
Components and Technology Conference , 2005, pp. 243-247.
[10] US patent 7,344,907 B2 Mar. 18, 2008
[11] C. O’Mahony, M. Hill, Z. Olszewski and A. Blake, “Wafer-Level Thin-
Film Encapsulation for MEMS”, Microelectronic Engineering vol. 86,
2009, pp. 1311–1313.
[12] R.H. Rico, B. Du Bois, A. Witvrouw, C. Van Hoof, J.-P. Celis,
“Fabrication of Porous Membranes for MEMS Packaging by One-Step
Anodization in Sulfuric Acid”, J. Electrochem. Soc. 154 (9) K74 – K78,
2007.
[13] J. Zekey, S. D Tezcan, J.-P. Celis, R. Puers, C. Van Hoof, and H.A.C.
Tilmans, “Wafer-Level Thin Film Vacuum Packages for MEMS using
Nanoporous Anodic Alumina Membrane”, Transducers conference,
2011, pp. 975-977.
[14] B. K. Lee, D. H. Choi and J. B. Yoon “Use of nanoporous columnar thin
film in the wafer level packaging of MEMS devices” J. Micromech.
Microeng. 20 045002 (9pp), 2010.
[15] W. I. Jang, C. A. Choi, M. L. Lee, C. H. Jun and Y. T. Kim “Fabrication
of MEMS devices by using anhydrous HF gas-phase etching with
alcoholic vapor” J. Micromech. Microeng. 12, 297–306, 2002.
[1] G. H. Mohamed, The MEMS Handbook, 2nd ed., New York, USA:
Taylor & Francis, 2002.
[2] M. Perlmutter and L. Robin High-Performance, “Low Cost Inertial
MEMS: A Market in Motion!” Position Location and Navigation
Symposium (PLANS), 2012, pp.225-229.
[3] R. R. Tummala and E. J. Rymaszewski “Microelectronics Packaging
Handbook”, 2nd ed., Massachustts, USA: Kluwer Academic Publishers
1989.
[4] K. Najafi, "Micropackaging Technologies for Integrated Microsystems:
Applications to MEMS and MOEMS", Micromaching and
Microfabrication Process Technology VII, Proc. Of SPIE Vol. 4979,
2003, pp.1-19.
[5] Lutz M. Partridge, B. Kim, M. Hopcroft, R. N. Candler, T.W. Kenny,
“MEMS Resonators: Getting the Packaging Right”, in: SEMICONJapan,
2005.
[6] H. Stark and K. Najafi, “A Low-Temperature Thin-Film Electroplated
Metal Vacuum Package”, J. Microelectromech. Syst., vol. 13, 2004, pp.
147–157.
[7] V. Lindroos, M. Tilli, A. Lehto and T. Motooka, Handbook of Silicon
Based MEMS Materials and Technologies, 1st ed., Elsevier, chap 38,
2010, pp. 569-574.
[8] J. L. Pornin, C. Gillot, G. Parat, F. Jacquet, E. Lagoutte, N. Sillon, G.
Poupon, F. Dumont, “Wafer Level Thin Film Encapsulation for BAW
RF MEMS.”, Electronic Components and Technology Conference,
2007, pp. 605-609.
[9] C. Gillot, J.L. Pornin, A. Amaud, E. Lagoutte, N.Sillon, J.C. Souriau,
“Wafer Level Thin Film Encapsulation for MEMS”, Electronic
Components and Technology Conference , 2005, pp. 243-247.
[10] US patent 7,344,907 B2 Mar. 18, 2008
[11] C. O’Mahony, M. Hill, Z. Olszewski and A. Blake, “Wafer-Level Thin-
Film Encapsulation for MEMS”, Microelectronic Engineering vol. 86,
2009, pp. 1311–1313.
[12] R.H. Rico, B. Du Bois, A. Witvrouw, C. Van Hoof, J.-P. Celis,
“Fabrication of Porous Membranes for MEMS Packaging by One-Step
Anodization in Sulfuric Acid”, J. Electrochem. Soc. 154 (9) K74 – K78,
2007.
[13] J. Zekey, S. D Tezcan, J.-P. Celis, R. Puers, C. Van Hoof, and H.A.C.
Tilmans, “Wafer-Level Thin Film Vacuum Packages for MEMS using
Nanoporous Anodic Alumina Membrane”, Transducers conference,
2011, pp. 975-977.
[14] B. K. Lee, D. H. Choi and J. B. Yoon “Use of nanoporous columnar thin
film in the wafer level packaging of MEMS devices” J. Micromech.
Microeng. 20 045002 (9pp), 2010.
[15] W. I. Jang, C. A. Choi, M. L. Lee, C. H. Jun and Y. T. Kim “Fabrication
of MEMS devices by using anhydrous HF gas-phase etching with
alcoholic vapor” J. Micromech. Microeng. 12, 297–306, 2002.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:70646", author = "Jaibir Sharma and Lee JaeWung and Merugu Srinivas and Navab Singh", title = "Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation", abstract = "This paper presents thermal annealing de-wetting
technique for the preparation of porous metal membrane for Thin
Film Encapsulation (TFE) application. Thermal annealing de-wetting
experimental results reveal that pore size formation in porous metal
membrane depend upon i.e. 1. The substrate at which metal is
deposited, 2. Melting point of metal used for porous metal cap layer
membrane formation, 3. Thickness of metal used for cap layer, 4.
Temperature used for formation of porous metal membrane. In order
to demonstrate this technique, Silver (Ag) was used as a metal for
preparation of porous metal membrane on amorphous silicon (a-Si)
and silicon oxide. The annealing of the silver thin film of various
thicknesses was performed at different temperature. Pores in porous
silver film were analyzed using Scanning Electron Microscope
(SEM). In order to check the usefulness of porous metal film for TFE
application, the porous silver film prepared on amorphous silicon (a-
Si) and silicon oxide was released using XeF2 and VHF, respectively.
Finally, guide line and structures are suggested to use this porous
membrane for robust TFE application.", keywords = "De-wetting, thermal annealing, metal, melting point,
porous.", volume = "9", number = "9", pages = "1092-4", }