Abstract: This study used Item Analysis, Exploratory Factor
Analysis (EFA) and Reliability Analysis (Cronbach-s α value) to
exam the Questions which selected by the Delphi method based on the
issue of “Socio-technical system (STS)" and user-centered
perspective. A structure questionnaire with seventy-four questions
which could be categorized into nine dimensions (healthcare
environment, organization behaviour, system quality, medical data
quality, service quality, safety quality, user usage, user satisfaction,
and organization net benefits) was provided to evaluate EMR of the
Taiwanese healthcare environment.
Abstract: In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.