Abstract: The energy consumption and delay in read/write
operation of conventional SRAM is investigated analytically as well
as by simulation. Explicit analytical expressions for the energy
consumption and delay in read and write operation as a function of
device parameters and supply voltage are derived. The expressions are
useful in predicting the effect of parameter changes on the energy
consumption and speed as well as in optimizing the design of
conventional SRAM. HSPICE simulation in standard 0.25μm CMOS
technology confirms precision of analytical expressions derived from
this paper.