Design of a Strain Sensor Based on Cascaded Fiber Bragg Grating for Remote Sensing Monitoring

Harsh environments require developed detection by an optical communication system to ensure a high level of security and safety. Fiber Bragg gratings (FBGs) are emerging sensing instruments that respond to variations in strain and temperature by varying wavelengths. In this study, a cascaded uniform FBG is designed as a strain sensor for 6 km length at 1550 nm wavelength with 30 °C temperature by analyzing dynamic strain and wavelength shifts. The FBG is placed in a small segment of an optical fiber that reflects light with a specific wavelength and passes on the remaining wavelengths. Consequently, periodic alteration occurs in the refractive index in the fiber core. The alteration in the modal index of the fiber is produced by strain effects on a Bragg wavelength. When the developed sensor is exposed to the strain (0.01) of the cascaded uniform FBG, the wavelength shifts by 0.0000144383 μm. The sensing accuracy of the developed sensor is 0.0012. Simulation results show the reliability and effectiveness of the strain monitoring sensor for remote sensing application.

A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal

Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa2Ca2Cu3O10 as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF2 as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF2)NInSb(Si/MgF2)N named S.I, and (Si/MgF2)NHgBa2Ca2Cu3O10(Si/MgF2)N named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types.