Abstract: The principle of all-silicon Raman lasers for an
output wavelength of 1.3 μm is presented, which employs
quasi-phase-matched structures and resonators to enhance the output
power. 1.3-μm laser beams for GE-PONs in FTTH systems generated
from a silicon device are very important because such a silicon device
can be monolithically integrated with the silicon planar lightwave
circuits (Si PLCs) used in the GE-PONs. This reduces the device
fabrication processes and time and also optical losses at the junctions
between optical waveguides of the Si PLCs and Si laser devices
when compared with 1.3-μm III-V semiconductor lasers set on the
Si PLCs employed at present. We show that the quasi-phase-matched
Si Raman laser with resonators can produce about 174 times larger
laser power at 1.3 μm (at maximum) than that without resonators
for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2
dB/cm, pumped at power 10 mW, where the length of the waveguide
is 3 mm and its cross-section is (1.5 μm)2.
Abstract: This paper presents an investigation of the fabrication of the optical devices in terms of their characteristics based on the use of the electromagnetic waves. Planar waveguides are used to examine the field modes (bound modes) and the parameters required for this structure. The modifications are conducted on surface plasmons based waveguides. Simple symmetric dielectric slab structure is used and analyzed in terms of transverse electric mode (TE-Mode) and transverse magnetic mode (TM-Mode. The paper presents mathematical and numerical solutions for solving simple symmetric plasmons and provides simulations of surface plasmons for field confinement. Asymmetric TM-mode calculations for dielectric surface plasmons are also provided.
Abstract: In this paper, synchronization of multiple chaotic
semiconductor lasers is achieved by appealing to complex system
theory. In particular, we consider dynamical networks composed by
semiconductor laser, as interconnected nodes, where the interaction
in the networks are defined by coupling the first state of each node.
An interest case is synchronized with master-slave configuration in
star topology. Nodes of these networks are modeled for the laser and
simulate by Matlab. These results are applicable to private
communication.
Abstract: We report on the use of strong external optical
feedback to enhance the modulation response of semiconductor lasers
over a frequency passband around modulation frequencies higher
than 60 GHz. We show that this modulation enhancement is a type of
photon-photon resonance (PPR) of oscillating modes in the external
cavity formed between the laser and the external reflector. The study
is based on a time-delay rate equation model that takes into account
both the strong feedback and multiple reflections in the external
cavity. We examine the harmonic and intermodulation distortions
associated with single and two-tone modulations in the mm-wave
band of the resonant modulation. We show that compared with
solitary lasers modulated around the carrier-photon resonance
frequency, the present mm-wave modulated signal has lower
distortions.
Abstract: The detection of environmental gases, 12CO2, 13CO2,
and CH4, using near-infrared semiconductor lasers with a short
laser path length is studied by means of wavelength-modulation
spectroscopy. The developed system is compact and has high
sensitivity enough to detect the absorption peaks of isotopic 13CO2
of a 3-% CO2 gas at 2 μm with a path length of 2.4 m, where
its peak size is two orders of magnitude smaller than that of the
ordinary 12CO2 peaks. In addition, the detection of 12CO2 peaks of
a 385-ppm (0.0385-%) CO2 gas in the air is made at 2 μm with a
path length of 1.4 m. Furthermore, in pursuing the detection of an
ancient environmental CH4 gas confined to a bubble in ice at the
polar regions, measurements of the absorption spectrum for a trace
gas of CH4 in a small area are attempted. For a 100-% CH4 gas
trapped in a ∼ 1 mm3 glass container, the absorption peaks of CH4
are obtained at 1.65 μm with a path length of 3 mm, and also the
gas pressure is extrapolated from the measured data.
Abstract: The technical realization of data transmission using
glass fiber began after the development of diode laser in year 1962.
The erbium doped fiber amplifiers (EDFA's) in high speed networks
allow information to be transmitted over longer distances without
using of signal amplification repeaters. These kinds of fibers are
doped with erbium atoms which have energy levels in its atomic
structure for amplifying light at 1550nm. When a carried signal wave
at 1550nm enters the erbium fiber, the light stimulates the excited
erbium atoms which pumped with laser beam at 980nm as additional
light. The wavelength and intensity of the semiconductor lasers
depend on the temperature of active zone and the injection current.
The present paper shows the effect of the diode lasers temperature
and injection current on the optical amplification. From the results of
in- and output power one may calculate the max. optical gain by
erbium doped fiber amplifier.