Abstract: The wide use of the Internet-based applications bring many challenges to the researchers to guarantee the continuity of the connections needed by the mobile hosts and provide reliable Internet access for them. One of proposed solutions by Internet Engineering Task Force (IETF) is to connect the local, multi-hop, and infrastructure-less Mobile Ad hoc Network (MANET) with Internet structure. This connection is done through multi-interface devices known as Internet Gateways. Many issues are related to this connection like gateway discovery, handoff, address auto-configuration and selecting the optimum gateway when multiple gateways exist. Many studies were done proposing gateway selection schemes with a single selection criterion or weighted multiple criteria. In this research, a review of some of these schemes is done showing the differences, the features, the challenges and the drawbacks of each of them.
Abstract: In this paper electrical characteristics of various kinds
of multiple-gate silicon nanowire transistors (SNWT) with the
channel length equal to 7 nm are compared. A fully ballistic quantum
mechanical transport approach based on NEGF was employed to
analyses electrical characteristics of rectangular and cylindrical
silicon nanowire transistors as well as a Double gate MOS FET. A
double gate, triple gate, and gate all around nano wires were studied
to investigate the impact of increasing the number of gates on the
control of the short channel effect which is important in nanoscale
devices. Also in the case of triple gate rectangular SNWT inserting
extra gates on the bottom of device can improve the application of
device. The results indicate that by using gate all around structures
short channel effects such as DIBL, subthreshold swing and delay
reduces.