Abstract: A high-speed current mirror with low-power method of adjusting current gain is presented. The current mirror provides continuous gain adjustment; yet, its gain can simply be programmed digitally, as well. The structure features the ever interesting merits of linear-in-dB gain control scheme and low power/voltage operation. The performance of proposed structure is verified through the simulation in TSMC 0.18 µm CMOS Technology. The proposed tunable gain current mirror structure draws only 18 µW from 0.9 V power supply and can operate at high frequencies up to 550 MHz in the worst case condition of maximum gain setting.
Abstract: Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at ±0.9 V.
Abstract: A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Volterra Series is applied to analyze nonlinearity sources of SiGe HBT device model clearly. Meanwhile, the influence of operating current to IMD3 is discussed. Then a β-helper current mirror bias circuit is applied to improve linearity, since the β-helper current mirror bias circuit can offer stable base biasing voltage. Meanwhile, it can also work as predistortion circuit when biasing voltages of three bias circuits are fine-tuned, by this way, the power gain and operating current of PA are optimized for best linearity. The three power stages which fabricated by 0.18 μm SiGe technology are bonded to the printed circuit board (PCB) to obtain impedances by Load-Pull system, then matching networks are done for best linearity with discrete passive components on PCB. The final measured three-stage PA exhibits 21.1 dBm of output power at 1 dB compression point (OP1dB) with power added efficiency (PAE) of 20.6% and 33 dB power gain under 3.3 V power supply voltage.
Abstract: In this paper, a low voltage high performance current mirror is presented. Its most important specifications, which are improved in this work, are analyzed and formulated proving that it has such outstanding merits as: Very low input resistance of 26mΩ, very wide current dynamic range of 8 decades from 10pA to 1mA (160dB) together with an extremely low current copy error of less than 0.6ppm, and very low input and output voltages. Furthermore, the proposed current mirror bandwidth is 944MHz utilizing very low power consumption (267μW) and transistors count. HSPICE simulation results are performed using TSMC 0.18μm CMOS technology utilizing 1.8V single power supply, confirming the theoretically proved outstanding performance of the proposed current mirror. Monte Carlo simulation of its most important parameter is also examined showing its sufficiently resistance against technology process variations.
Abstract: As the Silicon oxide scaled down in MOSFET
technology to few nanometers, gate Direct Tunneling (DT) in
Floating gate (FGMOSFET) devices has become a major concern for
analog designers. FGMOSFET has been used in many low-voltage
and low-power applications, however, there is no accurate model that
account for DT gate leakage in nano-scale. This paper studied and
analyzed different simulation models for FGMOSFET using TSMC
90-nm technology. The simulation results for FGMOSFET cascade
current mirror shows the impact of DT on circuit performance in
terms of current and voltage without the need for fabrication. This
works shows the significance of using an accurate model for
FGMOSFET in nan-scale technologies.
Abstract: In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple current mirror with input and output voltage requirements less than that of a simple current mirror is presented. These features are achieved with very simple structure avoiding extra large node impedances to ensure high bandwidth operation. The circuit's principle of operation is discussed and compared to simple and low voltage cascode (LVC) current mirrors. Such outstanding features of this current mirror as high output impedance ~384K, low input impedance~6.4, wide bandwidth~178MHz, low input voltage ~ 362mV, low output voltage ~ 38mV and low current transfer error ~4% (all at 50μA) makes it an outstanding choice for high performance applications. Simulation results in BSIM 0.35μm CMOS technology with HSPICE are given in comparison with simple, and LVC current mirrors to verify and validate the performance of the proposed current mirror.
Abstract: This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.
Abstract: There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.
Abstract: Versatile dual-mode class-AB CMOS four-quadrant
analog multiplier circuit is presented. The dual translinear loops and
current mirrors are the basic building blocks in realization scheme.
This technique provides; wide dynamic range, wide-bandwidth response
and low power consumption. The major advantages of this
approach are; its has single ended inputs; since its input is dual translinear
loop operate in class-AB mode which make this multiplier
configuration interesting for low-power applications; current multiplying,
voltage multiplying, or current and voltage multiplying can
be obtainable with balanced input. The simulation results of versatile
analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth
of about 19MHz, a maximum power consumption of 0.46mW,
and temperature compensated. Operation of versatile analog multiplier
was also confirmed through an experiment using CMOS transistor
array.
Abstract: A current mirror (CM) based on self cascode MOSFETs low voltage analog and mixed mode structures has been proposed. The proposed CM has high output impedance and can operate at 0.5 V. P-Spice simulations confirm the high performance of this CM with a bandwidth of 6.0 GHz at input current of 100 μA.
Abstract: A high-frequency low-power sinusoidal quadrature
oscillator is presented through the use of two 2nd-order low-pass
current-mirror (CM)-based filters, a 1st-order CM low-pass filter and
a CM bilinear transfer function. The technique is relatively simple
based on (i) inherent time constants of current mirrors, i.e. the
internal capacitances and the transconductance of a diode-connected
NMOS, (ii) a simple negative resistance RN formed by a resistor load
RL of a current mirror. Neither external capacitances nor inductances
are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V
CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature
oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz
and is current-tunable over a range of 370 MHz or 21.6 %. The
power consumption is at approximately 0.45 mW. The amplitude
matching and the quadrature phase matching are better than 0.05 dB
and 0.15°, respectively. Total harmonic distortions (THD) are less
than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise
ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a
normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The
ratio of the oscillation frequency (f0) to the unity-gain frequency (fT)
of a transistor is 0.25. Comparisons to other approaches are also
included.
Abstract: In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].