Abstract: Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.
Abstract: The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO2) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon.
Abstract: The present paper proposes using atomic force microscopy (AFM) and the concept of specific down force energy (SDFE) to establish a method for fabricating and cutting the burr for Y shape nanochannel on silicon (Si) substrate. For fabricating Y shape nanochannel, it first makes the experimental cutting path planning for fabricating Y shape nanochannel until the fifth cutting layer. Using the constant down force by AFM and SDFE theory and following the experimental cutting path planning, the cutting depth and width of each pass of Y shape nanochannel can be predicted by simulation. The paper plans the path for cutting the burr at the edge of Y shape nanochannel. Then, it carries out cutting the burr along the Y nanochannel edge by using a smaller down force. The height of standing burr at the edge is required to be below the set value of 0.54 nm. The results of simulation and experiment of fabricating and cutting the burr for Y shape nanochannel is further compared.
Abstract: Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.
Abstract: Alkylated silicon nanocrystals (C11-SiNCs) were
prepared successfully by galvanostatic etching of p-Si(100) wafers
followed by a thermal hydrosilation reaction of 1-undecene in
refluxing toluene in order to extract C11-SiNCs from porous silicon.
Erbium trichloride was added to alkylated SiNCs using a simple
mixing chemical route. To the best of our knowledge, this is the first
investigation on mixing SiNCs with erbium ions (III) by this
chemical method. The chemical characterization of C11-SiNCs and
their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray
photoemission spectroscopy (XPS). The optical properties of C11-
SiNCs and their mixtures with Er3+ were investigated using Raman
spectroscopy and photoluminescence (PL). The erbium mixed
alkylated SiNCs shows an orange PL emission peak at around 595
nm that originates from radiative recombination of Si. Er/C11-SiNCs
mixture also exhibits a weak PL emission peak at 1536 nm that
originates from the intra-4f transition in erbium ions (Er3+). The PL
peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to
three times as compared to pure C11-SiNCs. The collected data
suggest that this chemical mixing route leads instead to a transfer of
energy from erbium ions to alkylated SiNCs.
Abstract: Over the past years, the EMCCD has had a profound
influence on photon starved imaging applications relying on its unique
multiplication register based on the impact ionization effect in the
silicon. High signal-to-noise ratio (SNR) means high image quality.
Thus, SNR improvement is important for the EMCCD. This work
analyzes the SNR performance of an EMCCD with gain off and on. In
each mode, simplified SNR models are established for different
integration times. The SNR curves are divided into readout noise (or
CIC) region and shot noise region by integration time. Theoretical
SNR values comparing long frame integration and frame adding in
each region are presented and discussed to figure out which method is
more effective. In order to further improve the SNR performance,
pixel binning is introduced into the EMCCD. The results show that
pixel binning does obviously improve the SNR performance, but at the
expensive of the spatial resolution.
Abstract: This paper uses quasi-steady molecular statics model
and diamond tool to carry out simulation temperature rise of nanoscale
orthogonal cutting single-crystal silicon. It further qualitatively
analyzes temperature field of silicon workpiece without considering
heat transfer and considering heat transfer. This paper supposes that
the temperature rise of workpiece is mainly caused by two heat sources:
plastic deformation heat and friction heat. Then, this paper develops a
theoretical model about production of the plastic deformation heat and
friction heat during nanoscale orthogonal cutting. After the increased
temperature produced by these two heat sources are added up, the
acquired total temperature rise at each atom of the workpiece is
substituted in heat transfer finite difference equation to carry out heat
transfer and calculates the temperature field in each step and makes
related analysis.
Abstract: Electron multiplying charge coupled devices (EMCCDs) have revolutionized the world of low light imaging by introducing on-chip multiplication gain based on the impact ionization effect in the silicon. They combine the sub-electron readout noise with high frame rates. Signal-to-noise Ratio (SNR) is an important performance parameter for low-light-level imaging systems. This work investigates the SNR performance of an EMCCD operated in Non-inverted Mode (NIMO) and Inverted Mode (IMO). The theory of noise characteristics and operation modes is presented. The results show that the SNR of is determined by dark current and clock induced charge at high gain level. The optimum SNR performance is provided by an EMCCD operated in NIMO in short exposure and strong cooling applications. In contrast, an IMO EMCCD is preferable.
Abstract: Silicon is a beneficial element for plant growth. It
helps plants to overcome multiple stresses, alleviates metal toxicity
and improves nutrient imbalance. Field experiment was conducted as
split-split plot arranged in a randomized complete block design with
four replications. Irrigation system include continues flooding and
deficit as main plots and nitrogen rates N0, N46, N92, and N138 kg/ha
as sub plots and silicon rates Si0 & Si500 kg/ha as sub-subplots.
Results indicate that grain yield had not significant difference
between irrigation systems. Flooding irrigation had higher biological
yield than deficit irrigation whereas, no significant difference in grain
and straw yield. Nitrogen application increased grain, biological and
straw yield. Silicon application increased grain, biological and straw
yield but, decreased harvest index. Flooding irrigation had higher
number of total tillers / hill than deficit irrigation, but deficit
irrigation had higher number of fertile tillers / hill than flooding
irrigation. Silicon increased number of filled spikelet and decreased
blank spikelet. With high nitrogen application decreased 1000-grain
weight. It can be concluded that if the nitrogen application was high
and water supplied was available we could have silicon application
until increase grain yield.