Abstract: Density functional theory (DFT) calculations were performed to calculate aluminum-27, boron-11, and nitrogen-14 quadrupole coupling constant (CQ) in the representative considered model of (6, 0) boron nitride-aluminum nitride nanotube junction (BN-AlNNT) for the first time. To this aim, 1.3 nm length of BNAlN consisting of 18 Al, 18 B, and 36 N atoms was selected where the end atoms capped by hydrogen atoms. The calculated CQ values for optimized BN-AlNNT system reveal different electrostatic environment in the mentioned system. The calculations were performed using the Gaussian 98 package of program.
Abstract: Density functional theory (DFT) calculations were
performed to compute nitrogen-14 and boron-11 nuclear quadrupole
resonance (NQR) spectroscopy parameters in the representative
model of armchair boron nitride nanotube (BNNT) for the first time.
The considered model consisting of 1 nm length of H-capped (5, 5)
single-wall BNNT were first allowed to fully relax and then the NQR
calculations were carried out on the geometrically optimized model.
The evaluated nuclear quadrupole coupling constants and asymmetry
parameters for the mentioned nuclei reveal that the model can be
divided into seven layers of nuclei with an equivalent electrostatic
environment where those nuclei at the ends of tubes have a very
strong electrostatic environment compared to the other nuclei along
the length of tubes. The calculations were performed via Gaussian 98
package of program.
Abstract: A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.