Abstract: This paper presents a physics-based model for the
high-voltage fast recovery diodes. The model provides a good
trade-off between reverse recovery time and forward voltage drop
realized through a combination of lifetime control and emitter
efficiency reduction techniques. The minority carrier lifetime can be
extracted from the reverse recovery transient response and forward
characteristics. This paper also shows that decreasing the amount of
the excess carriers stored in the drift region will result in softer
characteristics which can be achieved using a lower doping level. The
developed model is verified by experiment and the measurement data
agrees well with the model.