Abstract: The toxicity of lead associated with the lifecycle of perovskite solar cells (PSCs( is a serious concern which may prove to be a major hurdle in the path toward their commercialization. The current proposed lead-free PSCs including Ag(I), Bi(III), Sb(III), Ti(IV), Ge(II), and Sn(II) low-toxicity cations are still plagued with the critical issues of poor stability and low efficiency. This is mainly because of their chemical stability. In the present research, utilization of all inorganic CsSnGeI3 based materials offers the advantages to enhance resistance of device to degradation, reduce the cost of cells, and minimize the carrier recombination. The presence of inorganic halide perovskite improves the photovoltaic parameters of PCSs via improved surface coverage and stability. The inverted structure of simulated devices using a 1D simulator like solar cell capacitance simulator (SCAPS) version 3308 involves TCOHTL/Perovskite/ETL/Au contact layer. PEDOT:PSS, PCBM, and CsSnGeI3 used as hole transporting layer (HTL), electron transporting layer (ETL), and perovskite absorber layer in the inverted structure for the first time. The holes are injected from highly stable and air tolerant Sn0.5Ge0.5I3 perovskite composition to HTM and electrons from the perovskite to ETL. Simulation results revealed a great dependence of power conversion efficiency (PCE) on the thickness and defect density of perovskite layer. Here the effect of an increase in operating temperature from 300 K to 400 K on the performance of CsSnGeI3 based perovskite devices is investigated. Comparison between simulated CsSnGeI3 based PCSs and similar real testified devices with spiro-OMeTAD as HTL showed that the extraction of carriers at the interfaces of perovskite absorber depends on the energy level mismatches between perovskite and HTL/ETL. We believe that optimization results reported here represent a critical avenue for fabricating the stable, low-cost, efficient, and eco-friendly all-inorganic Cs-Sn-Ge based lead-free perovskite devices.
Abstract: The impact of OO design on software quality
characteristics such as defect density and rework by mean of
experimental validation. Encapsulation, inheritance, polymorphism,
reusability, Data hiding and message-passing are the major attribute
of an Object Oriented system. In order to evaluate the quality of an
Object oriented system the above said attributes can act as indicators.
The metrics are the well known quantifiable approach to express any
attribute. Hence, in this paper we tried to formulate a framework of
metrics representing the attributes of object oriented system.
Empirical Data is collected from three different projects based on
object oriented paradigms to calculate the metrics.
Abstract: The overriding goal of software engineering is to
provide a high quality system, application or a product. To achieve
this goal, software engineers must apply effective methods coupled
with modern tools within the context of a mature software process
[2]. In addition, it is also must to assure that high quality is realized.
Although many quality measures can be collected at the project
levels, the important measures are errors and defects. Deriving a
quality measure for reusable components has proven to be
challenging task now a days. The results obtained from the study are
based on the empirical evidence of reuse practices, as emerged from
the analysis of industrial projects. Both large and small companies,
working in a variety of business domains, and using object-oriented
and procedural development approaches contributed towards this
study. This paper proposes a quality metric that provides benefit at
both project and process level, namely defect removal efficiency
(DRE).
Abstract: Irradiated material is a typical example of a complex
system with nonlinear coupling between its elements. During
irradiation the radiation damage is developed and this development
has bifurcations and qualitatively different kinds of behavior.
The accumulation of primary defects in irradiated crystals is
considered in frame work of nonlinear evolution of complex system.
The thermo-concentration nonlinear feedback is carried out as a
mechanism of self-oscillation development.
It is shown that there are two ways of the defect density evolution
under stationary irradiation. The first is the accumulation of defects;
defect density monotonically grows and tends to its stationary state
for some system parameters. Another way that takes place for
opportune parameters is the development of self-oscillations of the
defect density.
The stationary state, its stability and type are found. The
bifurcation values of parameters (environment temperature, defect
generation rate, etc.) are obtained. The frequency of the selfoscillation
and the conditions of their development is found and
rated. It is shown that defect density, heat fluxes and temperature
during self-oscillations can reach much higher values than the
expected steady-state values. It can lead to a change of typical
operation and an accident, e.g. for nuclear equipment.