Abstract: Pull-in instability is a nonlinear and crucial effect that is important for the design of microelectromechanical system devices. In this paper, the appropriate electrostatic voltage range is determined by measuring fluid flow pressure via micro pressure sensor based microbeam. The microbeam deflection contains two parts, the static and perturbation deflection of static. The second order equation regarding the equivalent stiffness, mass and damping matrices based on Galerkin method is introduced to predict pull-in instability due to the external voltage. Also the reduced order method is used for solving the second order nonlinear equation of motion. Furthermore, in the present study, the micro capacitive pressure sensor is designed for measuring special fluid flow pressure range. The results show that the measurable pressure range can be optimized, regarding damping field and external voltage.
Abstract: Nine Degrees of Freedom (9 DOF) systems are
already in development in many areas. In this paper, an integrated
pressure sensor is proposed that will make use of an already existing
monolithic 9 DOF inertial MEMS platform. Capacitive pressure
sensors can suffer from limited sensitivity for a given size of
membrane. This novel pressure sensor design increases the sensitivity
by over 5 times compared to a traditional array of square diaphragms
while still fitting within a 2 mm x 2 mm chip and maintaining a fixed
static capacitance. The improved design uses one large diaphragm
supported by pillars with fixed electrodes placed above the areas of
maximum deflection. The design optimization increases the
sensitivity from 0.22 fF/kPa to 1.16 fF/kPa. Temperature sensitivity
was also examined through simulation.
Abstract: This paper presents a resonant-based read-out circuit for capacitive pressure sensors. The proposed read-out circuit consists of an LC oscillator and a counter. The circuit detects the capacitance changes of a capacitive pressure sensor by means of frequency shifts from its nominal operation frequency. The proposed circuit is designed in 0.18 m CMOS with an estimated power consumption of 43.1mW. Simulation results show that the circuit has a capacitive resolution of 8.06kHz/fF, which enables it for high resolution pressure detection.
Abstract: This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.