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International Journal of Electrical, Electronic and Communication Sciences

ISSN: 2517-9438

Total 27 content found

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Electrophysical and Thermoelectric Properties of Nano-scaled In2O3:Sn, Zn, Ga-Based Thin Films: Achievements and Limitations for Thermoelectric Applications

Year: 2016 Volume: 10 Issue: 7 884 - 888 Pages

Abstract: The thermoelectric properties of nano-scaled In2O3:Sn films deposited by spray pyrolysis are considered in the present report. It is shown that multicomponent In2O3:Sn-based films are promising material for the application in thermoelectric devices. It is established that the increase in the efficiency of thermoelectric conversion at CSn~5% occurred due to nano-scaled structure of the films studied and the effect of the grain boundary filtering of the low energy electrons. There are also analyzed the limitations that may appear during such material using in devices developed for the market of thermoelectric generators and refrigerators. Studies showed that the stability of nano-scaled film’s parameters is the main problem which can limit the application of these materials in high temperature thermoelectric converters.

Analytical Design of IMC-PID Controller for Ideal Decoupling Embedded in Multivariable Smith Predictor Control System

Year: 2016 Volume: 10 Issue: 7 879 - 883 Pages

Abstract: In this paper, the analytical tuning rules of IMC-PID controller are presented for the multivariable Smith predictor that involved the ideal decoupling. Accordingly, the decoupler is first introduced into the multivariable Smith predictor control system by a well-known approach of ideal decoupling, which is compactly extended for general nxn multivariable processes and the multivariable Smith predictor controller is then obtained in terms of the multiple single-loop Smith predictor controllers. The tuning rules of PID controller in series with filter are found by using Maclaurin approximation. Many multivariable industrial processes are employed to demonstrate the simplicity and effectiveness of the presented method. The simulation results show the superior performances of presented method in compared with the other methods.

Performences of Type-2 Fuzzy Logic Control and Neuro-Fuzzy Control Based on DPC for Grid Connected DFIG with Fixed Switching Frequency

Year: 2016 Volume: 10 Issue: 7 870 - 878 Pages

Abstract: In this paper, type-2 fuzzy logic control (T2FLC) and neuro-fuzzy control (NFC) for a doubly fed induction generator (DFIG) based on direct power control (DPC) with a fixed switching frequency is proposed for wind generation application. First, a mathematical model of the doubly-fed induction generator implemented in d-q reference frame is achieved. Then, a DPC algorithm approach for controlling active and reactive power of DFIG via fixed switching frequency is incorporated using PID. The performance of T2FLC and NFC, which is based on the DPC algorithm, are investigated and compared to those obtained from the PID controller. Finally, simulation results demonstrate that the NFC is more robust, superior dynamic performance for wind power generation system applications.

Optimal Design of Substation Grounding Grid Based on Genetic Algorithm Technique

Year: 2016 Volume: 10 Issue: 7 863 - 869 Pages

Abstract: With the incessant increase of power systems capacity and voltage grade, the safety of grounding grid becomes more and more prominent. In this paper, the designing substation grounding grid is presented by means of genetic algorithm (GA). This approach purposes to control the grounding cost of the power system with the aid of controlling grounding rod number and conductor lengths under the same safety limitations. The proposed technique is used for the design of the substation grounding grid in Khalda Petroleum Company “El-Qasr” power plant and the design was simulated by using CYMGRD software for results verification. The result of the design is highly complying with IEEE 80-2000 standard requirements.

Characterization of Inertial Confinement Fusion Targets Based on Transmission Holographic Mach-Zehnder Interferometer

Year: 2016 Volume: 10 Issue: 7 858 - 862 Pages

Abstract: To provide the conditions for nuclear fusion by high energy and powerful laser beams, it is required to have a high degree of symmetry and surface uniformity of the spherical capsules to reduce the Rayleigh-Taylor hydrodynamic instabilities. In this paper, we have used the digital microscopic holography based on Mach-Zehnder interferometer to study the quality of targets for inertial fusion. The interferometric pattern of the target has been registered by a CCD camera and analyzed by Holovision software. The uniformity of the surface and shell thickness are investigated and measured in reconstructed image. We measured shell thickness in different zone where obtained non uniformity 22.82 percent.  

Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications

Year: 2016 Volume: 10 Issue: 7 853 - 857 Pages

Abstract: In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

High-Efficiency Comparator for Low-Power Application

Year: 2016 Volume: 10 Issue: 7 849 - 852 Pages

Abstract: In this paper, dynamic comparator structure employing two methods for power consumption reduction with applications in low-power high-speed analog-to-digital converters have been presented. The proposed comparator has low consumption thanks to power reduction methods. They have the ability for offset adjustment. The comparator consumes 14.3 μW at 100 MHz which is equal to 11.8 fJ. The comparator has been designed and simulated in 180 nm CMOS. Layouts occupy 210 μm2.