Scholarly

Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

Year: 2013 Volume: 7 Issue: 9 1170 - 1175 Pages

Abstract: This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply.

Comparison of Router Intelligent and Cooperative Host Intelligent Algorithms in a Continuous Model of Fixed Telecommunication Networks

Year: 2013 Volume: 7 Issue: 9 1161 - 1169 Pages

Abstract: The performance of state of the art worldwide telecommunication networks strongly depends on the efficiency of the applied routing mechanism. Game theoretical approaches to this problem offer new solutions. In this paper a new continuous network routing model is defined to describe data transfer in fixed telecommunication networks of multiple hosts. The nodes of the network correspond to routers whose latency is assumed to be traffic dependent. We propose that the whole traffic of the network can be decomposed to a finite number of tasks, which belong to various hosts. To describe the different latency-sensitivity, utility functions are defined for each task. The model is used to compare router and host intelligent types of routing methods, corresponding to various data transfer protocols. We analyze host intelligent routing as a transferable utility cooperative game with externalities. The main aim of the paper is to provide a framework in which the efficiency of various routing algorithms can be compared and the transferable utility game arising in the cooperative case can be analyzed.

ALD HfO2 Based RRAM with Ti Capping

Year: 2013 Volume: 7 Issue: 9 1159 - 1160 Pages

Abstract: HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.

Switching Behaviors of TiN/HfOx/Pt Based RRAM

Year: 2013 Volume: 7 Issue: 9 1156 - 1158 Pages

Abstract: Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.

Low Frequency Noise Behavior of Independent Gate Junctionless FinFET

Year: 2013 Volume: 7 Issue: 9 1153 - 1155 Pages

Abstract: In this paper we use low frequency noise analysis to understand and map the current conduction path in a multi gate junctionless FinFET. The device used in this study behaves as a gated resistor and shows excellent short channel effect suppression due to its multi gate structure. Generally for a bulk conduction device like the junctionless device studied in this work, the low frequency noise can be modelled using the mobility fluctuation model; however for this device we can also see the effect of carrier fluctuations on the LFN characteristic. The noise characteristic at different gate bias and also the possible location of the traps is explained.

Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

Year: 2013 Volume: 7 Issue: 9 1149 - 1152 Pages

Abstract: This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Optimal Current Control of Externally Excited Synchronous Machines in Automotive Traction Drive Applications

Year: 2013 Volume: 7 Issue: 9 1142 - 1148 Pages

Abstract: The excellent suitability of the externally excited synchronous machine (EESM) in automotive traction drive applications is justified by its high efficiency over the whole operation range and the high availability of materials. Usually, maximum efficiency is obtained by modelling each single loss and minimizing the sum of all losses. As a result, the quality of the optimization highly depends on the precision of the model. Moreover, it requires accurate knowledge of the saturation dependent machine inductances. Therefore, the present contribution proposes a method to minimize the overall losses of a salient pole EESM and its inverter in steady state operation based on measurement data only. Since this method does not require any manufacturer data, it is well suited for an automated measurement data evaluation and inverter parametrization. The field oriented control (FOC) of an EESM provides three current components resp. three degrees of freedom (DOF). An analytic minimization of the copper losses in the stator and the rotor (assuming constant inductances) is performed and serves as a first approximation of how to choose the optimal current reference values. After a numeric offline minimization of the overall losses based on measurement data the results are compared to a control strategy that satisfies cos (ϕ) = 1.

CAD Model of Cole Cole Representation for Analyzing Performance of Microstrip Moisture Sensing Applications

Year: 2013 Volume: 7 Issue: 9 1137 - 1141 Pages

Abstract: In the past decade, the development of microstrip sensor application has evolved tremendously. Although cut and trial method was adopted to develop microstrip sensing applications in the past, Computer-Aided-Design (CAD) is a more effective as it ensures less time is consumed and cost saving is achieved in developing microstrip sensing applications. Therefore microstrip sensing applications has gained popularity as an effective tool adopted in continuous sensing of moisture content particularly in products that is administered mainly by liquid content. In this research, the Cole-Cole representation of reactive relaxation is applied to assess the performance of the microstrip sensor devices. The microstrip sensor application is an effective tool suitable for sensing the moisture content of dielectric material. Analogous to dielectric relaxation consideration of Cole-Cole diagrams as applied to dielectric materials, a “reactive relaxation concept” concept is introduced to represent the frequency-dependent and moisture content characteristics of microstrip sensor devices.

Spectrum Sensing Based On the Cyclostationarity of PU Signals in High Traffic Environments

Year: 2013 Volume: 7 Issue: 9 1133 - 1136 Pages

Abstract: In cognitive radio (CR) systems, the primary user (PU) signal would randomly depart or arrive during the sensing period of a CR user, which is referred to as the high traffic environment. In this paper, we propose a novel spectrum sensing scheme based on the cyclostationarity of PU signals in high traffic environments. Specifically, we obtain a test statistic by applying an estimate of spectral autocoherence function of the PU signal to the generalized- likelihood ratio. From numerical results, it is confirmed that the proposed scheme provides a better spectrum sensing performance compared with the conventional spectrum sensing scheme based on the energy of the PU signals in high traffic environments.

International Journal of Electrical, Electronic and Communication Sciences

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