Characterization of a Hypoeutectic Al Alloy Obtained by Selective Laser Melting

In this investigation, a hypoeutectic AlSi11Cu alloy was printed. This alloy was obtained in powder form with an average particle size of 40 µm. Bars 20 mm in diameter and 100 mm in length were printed with the building direction parallel to the bars' longitudinal direction. The microstructural characterization demonstrated an Al matrix surrounded by a Si network forming a coral-like pattern. The microstructure of the alloy showed a heterogeneous behavior with a mixture of columnar and equiaxed grains. Likewise, the texture indicated that the columnar grains were preferentially oriented towards the building direction, while the equiaxed followed a texture dominated by the cube component. On the other hand, the as-printed material strength showed higher values than those obtained in the same alloy using conventional processes such as casting. In addition, strength and ductility differences were found in the printed material, depending on the measurement direction. The highest values were obtained in the radial direction (565 MPa maximum strength and 4.8% elongation to failure). The lowest values corresponded to the transverse direction (508 MPa maximum strength and 3.2 elongation to failure), which corroborate the material anisotropy.

Optical and Double Folding Analysis for 6Li+16O Elastic Scattering

Available experimental angular distributions for 6Li elastically scattered from 16O nucleus in the energy range 13.0–50.0 MeV are investigated and reanalyzed using optical model of the conventional phenomenological potential and also using double folding optical model of different interaction models: DDM3Y1, CDM3Y1, CDM3Y2, and CDM3Y3. All the involved models of interaction are of M3Y Paris except DDM3Y1 which is of M3Y Reid and the main difference between them lies in the different values for the parameters of the incorporated density distribution function F(ρ). We have extracted the renormalization factor NR for 6Li+16O nuclear system in the energy range 13.0–50.0 MeV using the aforementioned interaction models.

Electronic Structure Calculation of AsSiTeB/SiAsBTe Nanostructures Using Density Functional Theory

The electronic structure calculation for the nanoclusters of AsSiTeB/SiAsBTe quaternary semiconductor alloy belonging to the III-V Group elements was performed. Motivation for this research work was to look for accurate electronic and geometric data of small nanoclusters of AsSiTeB/SiAsBTe in the gaseous form. The two clusters, one in the linear form and the other in the bent form, were studied under the framework of Density Functional Theory (DFT) using the B3LYP functional and LANL2DZ basis set with the software packaged Gaussian 16. We have discussed the Optimized Energy, Frontier Orbital Energy Gap in terms of HOMO-LUMO, Dipole Moment, Ionization Potential, Electron Affinity, Binding Energy, Embedding Energy, Density of States (DoS) spectrum for both structures. The important findings of the predicted nanostructures are that these structures have wide band gap energy, where linear structure has band gap energy (Eg) value is 2.375 eV and bent structure (Eg) value is 2.778 eV. Therefore, these structures can be utilized as wide band gap semiconductors. These structures have high electron affinity value of 4.259 eV for the linear structure and electron affinity value of 3.387 eV for the bent structure form. It shows that electron acceptor capability is high for both forms. The widely known application of these compounds is in the light emitting diodes due to their wide band gap nature.