Physical Parameter Based Compact Expression for Propagation Constant of SWCNT Interconnects
Novel compact expressions for propagation constant (γ) of SWCNT and bundled SWCNTs interconnect, in terms of physical parameters such as length, operating frequency and diameter of CNTs is proposed in this work. These simplified expressions enable physical insight and accurate estimation of signal attenuation level and its phase change at any length for a particular frequency. The proposed expressions are validated against SPICE simulated results of lumped as well as distributed equivalent electrical RLC nets of CNT interconnect. These expressions also help us to evaluate the cut off frequencies of SWCNTs for different interconnect lengths.
[1] "International technology roadmap for semiconductors,” 2008. http://public.itrs.net/.
[2] List, S., Bamal, M., Stucchi, M., and Maex, K., 2006, "A global view of interconnects,” Microelectronic Engineering, vol. 83, pp. 2200–2207.
[3] Engelhardt, M., Schindler, G., Steinhögl, W., Steinlesberger, G., and Traving, M., 2005 "Materials for Information Technology, ch. Interconnect Technology - Today, Recent Advances and a Look into the Future Engineering Materials and Processes, Springer London,” pp. 213–224.
[4] Nieuwoudt, A. and Massoud, Y., M, 2006 "Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques”, IEEE Trans. Electron Devices, 53 (10), pp.2460–2466.
[5] Arijit Raychowdhury and Kaushik Roy, 2006, "Modeling of Metallic Carbon-Nanotube Interconnects for Circuit Simulations and a Comparison with Cu Interconnects for Scaled Technologies”, IEEE Tr. On computer Aided Design of Integrated Circuits, 25 (1), pp. 58-65.
[6] Azad Naeemi and James D. Meindl, 2009, "Performance Modeling for Carbon Nanotube Interconnects”, In e. b. Kong, Carbon Nanotube Electronics, Springer.
[7] Azad Naeemi, R. S., "Performance comparison between carbon nanotube and copper interconnects for gigascale integration”, 2005, IEEE Electron Device Lett., 26, pp. 84-86.
[8] F. Kreupl et.al, 2002, "Carbon nanotubes in interconnect applications”, Microelectronic Engineering, 64, pp. 399–408.
[9] Burke P. J., 2002, "Luttingger Theory as a model of the Gigahertz electrical properties of carbon nanotubes”, IEEE Trans. on Nanotechnology, 1, pp. 129-144.
[10] Navin Srivastava and Kaustav Banerjee, 2005, "Performance analysis of carbon nanotube interconnects for VLSI applications”, ICCAD, pp. 383-390.
[11] Hong Li et.al, 2009, "Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects”, IEEE Trans. on Electron Devices, 56(9), pp. 1799-1821.
[12] Kaustav Banerjee and Navin Srivastava, 2006, "Are carbon nanotubes the future of VLSI interconnections”, DAC, pp. 809- 813.
[13] Zhou, X., et.al. , 2005, "Band Structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors”, Phys. Rev. Lett., 95(14), pp. 146805.
[14] Naeemi, A., and Meindl, J. D., 2007, "Design and performance modelling for single-walled carbon nanotubes as local, semi-global and global interconnects in giga-scale integrated systems”, IEEE Trans. Electron Devices, 54(1), pp. 26-37.
[15] Nihei, M., et.al, 2005, "Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells”, Proc. Interconnect Technol. Conf., pp. 234-236.
[16] Hong Li et.al, 2008, "Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects”, IEEE Trans. Electron Devices Devices, 55(6), pp. 1328-1337.
[17] Nisha Kuruvilla, Kollarama Subramanyam and Raina, J. P., 2012, "Physical Parameter Based Model for Characteristic Impedance of SWCNT Interconnects and its Performance Analysis.” IISTE Journal of Innovative System Design and Engineering, 3(9), pp.16-26.
[1] "International technology roadmap for semiconductors,” 2008. http://public.itrs.net/.
[2] List, S., Bamal, M., Stucchi, M., and Maex, K., 2006, "A global view of interconnects,” Microelectronic Engineering, vol. 83, pp. 2200–2207.
[3] Engelhardt, M., Schindler, G., Steinhögl, W., Steinlesberger, G., and Traving, M., 2005 "Materials for Information Technology, ch. Interconnect Technology - Today, Recent Advances and a Look into the Future Engineering Materials and Processes, Springer London,” pp. 213–224.
[4] Nieuwoudt, A. and Massoud, Y., M, 2006 "Evaluating the impact of resistance in carbon nanotube bundles for VLSI interconnect using diameter-dependent modeling techniques”, IEEE Trans. Electron Devices, 53 (10), pp.2460–2466.
[5] Arijit Raychowdhury and Kaushik Roy, 2006, "Modeling of Metallic Carbon-Nanotube Interconnects for Circuit Simulations and a Comparison with Cu Interconnects for Scaled Technologies”, IEEE Tr. On computer Aided Design of Integrated Circuits, 25 (1), pp. 58-65.
[6] Azad Naeemi and James D. Meindl, 2009, "Performance Modeling for Carbon Nanotube Interconnects”, In e. b. Kong, Carbon Nanotube Electronics, Springer.
[7] Azad Naeemi, R. S., "Performance comparison between carbon nanotube and copper interconnects for gigascale integration”, 2005, IEEE Electron Device Lett., 26, pp. 84-86.
[8] F. Kreupl et.al, 2002, "Carbon nanotubes in interconnect applications”, Microelectronic Engineering, 64, pp. 399–408.
[9] Burke P. J., 2002, "Luttingger Theory as a model of the Gigahertz electrical properties of carbon nanotubes”, IEEE Trans. on Nanotechnology, 1, pp. 129-144.
[10] Navin Srivastava and Kaustav Banerjee, 2005, "Performance analysis of carbon nanotube interconnects for VLSI applications”, ICCAD, pp. 383-390.
[11] Hong Li et.al, 2009, "Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects”, IEEE Trans. on Electron Devices, 56(9), pp. 1799-1821.
[12] Kaustav Banerjee and Navin Srivastava, 2006, "Are carbon nanotubes the future of VLSI interconnections”, DAC, pp. 809- 813.
[13] Zhou, X., et.al. , 2005, "Band Structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors”, Phys. Rev. Lett., 95(14), pp. 146805.
[14] Naeemi, A., and Meindl, J. D., 2007, "Design and performance modelling for single-walled carbon nanotubes as local, semi-global and global interconnects in giga-scale integrated systems”, IEEE Trans. Electron Devices, 54(1), pp. 26-37.
[15] Nihei, M., et.al, 2005, "Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells”, Proc. Interconnect Technol. Conf., pp. 234-236.
[16] Hong Li et.al, 2008, "Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects”, IEEE Trans. Electron Devices Devices, 55(6), pp. 1328-1337.
[17] Nisha Kuruvilla, Kollarama Subramanyam and Raina, J. P., 2012, "Physical Parameter Based Model for Characteristic Impedance of SWCNT Interconnects and its Performance Analysis.” IISTE Journal of Innovative System Design and Engineering, 3(9), pp.16-26.
@article{"International Journal of Electrical, Electronic and Communication Sciences:66466", author = "Kollarama Subramanyam and Nisha Kuruvilla and J. P. Raina", title = "Physical Parameter Based Compact Expression for Propagation Constant of SWCNT Interconnects", abstract = "Novel compact expressions for propagation constant (γ) of SWCNT and bundled SWCNTs interconnect, in terms of physical parameters such as length, operating frequency and diameter of CNTs is proposed in this work. These simplified expressions enable physical insight and accurate estimation of signal attenuation level and its phase change at any length for a particular frequency. The proposed expressions are validated against SPICE simulated results of lumped as well as distributed equivalent electrical RLC nets of CNT interconnect. These expressions also help us to evaluate the cut off frequencies of SWCNTs for different interconnect lengths.
", keywords = "Attenuation constant, Bundled SWCNT, CNT interconnects, Propagation Constant.", volume = "8", number = "1", pages = "140-5", }
