Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits
Bode stability analysis based on transmission line
modeling (TLM) for single wall carbon nanotube (SWCNT)
interconnects used in 3D-VLSI circuits is investigated for the first
time. In this analysis, the dependence of the degree of relative
stability for SWCNT interconnects on the geometry of each tube has
been acquired. It is shown that, increasing the length and diameter of
each tube, SWCNT interconnects become more stable.
[1] A. Nieuwoudt, and Y. Massoud, "Understanding the Impact of
Inductance in Carbon Nanotube Bundles for VLSI Interconnect Using
Scalable Modeling Techniques," IEEE Transactions on Nanotechnology,
vol. 5, pp 758-765 , Nov. 2006.
[2] International Technology Roadmap for Semiconductors (ITRS), 2009.
http://www.itrs.net
[3] B. Q. Wei, R. Vajtai, and P. M. Ajayan, "Reliability and current carrying
capacity of carbon nanotubes," Applied physics letters, vol. 79, pp 1172-
1174 , july 2001.
[4] Kaustav Banerjee, Sungjun Im, and Navin Srivastava, "Interconnect
Modeling and Analysis in the Nanometer Era: Cu and Beyond,"
Proceedings of the 22nd Advanced Metallization Conference, Colorado
Springs,Sep. 2005.
[5] A.G. Chiariello, A. Maffucci, and G. Miano, "Signal Integrity Analysis
of Carbon Nanotube on-chip Interconnects," IEEE Signal Propagation
on Interconnects, Strasbourg, pp. 1-4, June 2009.
[6] N. Srivastava and K. Banerjee, "Performance analysis of carbon
nanotube interconnects for VLSI applications," in IEEE ICCAD, pp.
383-390, Nov. 2005.
[7] W. H. Hayt, and J. A. Buck, "Engineering Electromagnetics," 7th Ed.
New York: McGraw-Hill, 2005.
[8] A. Naeemi and J. D. Meindl, "Compact physical models for multiwall
carbon-nanotube interconnects,"" IEEE Electron Device Lett., vol.
27,no. 5, pp. 338-340, May 2006.
[9] R. C. Dorf, R. H. Bishop, Modern Control System, 11th Ed., Englewood
Cliffs, NJ: Prentice-Halls, 2008.
[10] D. Fathi, and B. Forouzandeh, "A Novel Approach for Stability Analysis
in Carbon Nanotube Interconnects," IEEE Electron Device Lett., vol. 30,
pp. 475-477, Apr. 2009.
[11] D. Fathi, B. Forouzandeh, S. Mohajerzadeh, and R. Sarvari, "Accurate
analysis of carbon nanotube interconnects using transmission line
model," Micro & Nano letters, vol. 4, pp. 116-121, Jul. 2009.
[12] S. H. Nasiri, M. K. Moravvej-Farshi, and R. Faez, "Stability Analysis in
Graphene Nanoribbon Interconnects," IEEE Electron Device Lett., vol.
31, pp. 1458-1460, Oct. 2010.
[1] A. Nieuwoudt, and Y. Massoud, "Understanding the Impact of
Inductance in Carbon Nanotube Bundles for VLSI Interconnect Using
Scalable Modeling Techniques," IEEE Transactions on Nanotechnology,
vol. 5, pp 758-765 , Nov. 2006.
[2] International Technology Roadmap for Semiconductors (ITRS), 2009.
http://www.itrs.net
[3] B. Q. Wei, R. Vajtai, and P. M. Ajayan, "Reliability and current carrying
capacity of carbon nanotubes," Applied physics letters, vol. 79, pp 1172-
1174 , july 2001.
[4] Kaustav Banerjee, Sungjun Im, and Navin Srivastava, "Interconnect
Modeling and Analysis in the Nanometer Era: Cu and Beyond,"
Proceedings of the 22nd Advanced Metallization Conference, Colorado
Springs,Sep. 2005.
[5] A.G. Chiariello, A. Maffucci, and G. Miano, "Signal Integrity Analysis
of Carbon Nanotube on-chip Interconnects," IEEE Signal Propagation
on Interconnects, Strasbourg, pp. 1-4, June 2009.
[6] N. Srivastava and K. Banerjee, "Performance analysis of carbon
nanotube interconnects for VLSI applications," in IEEE ICCAD, pp.
383-390, Nov. 2005.
[7] W. H. Hayt, and J. A. Buck, "Engineering Electromagnetics," 7th Ed.
New York: McGraw-Hill, 2005.
[8] A. Naeemi and J. D. Meindl, "Compact physical models for multiwall
carbon-nanotube interconnects,"" IEEE Electron Device Lett., vol.
27,no. 5, pp. 338-340, May 2006.
[9] R. C. Dorf, R. H. Bishop, Modern Control System, 11th Ed., Englewood
Cliffs, NJ: Prentice-Halls, 2008.
[10] D. Fathi, and B. Forouzandeh, "A Novel Approach for Stability Analysis
in Carbon Nanotube Interconnects," IEEE Electron Device Lett., vol. 30,
pp. 475-477, Apr. 2009.
[11] D. Fathi, B. Forouzandeh, S. Mohajerzadeh, and R. Sarvari, "Accurate
analysis of carbon nanotube interconnects using transmission line
model," Micro & Nano letters, vol. 4, pp. 116-121, Jul. 2009.
[12] S. H. Nasiri, M. K. Moravvej-Farshi, and R. Faez, "Stability Analysis in
Graphene Nanoribbon Interconnects," IEEE Electron Device Lett., vol.
31, pp. 1458-1460, Oct. 2010.
@article{"International Journal of Electrical, Electronic and Communication Sciences:57453", author = "Saeed H. Nasiri and Rahim Faez and Bita Davoodi and Maryam Farrokhi", title = "Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits", abstract = "Bode stability analysis based on transmission line
modeling (TLM) for single wall carbon nanotube (SWCNT)
interconnects used in 3D-VLSI circuits is investigated for the first
time. In this analysis, the dependence of the degree of relative
stability for SWCNT interconnects on the geometry of each tube has
been acquired. It is shown that, increasing the length and diameter of
each tube, SWCNT interconnects become more stable.", keywords = "Bode stability criterion, Interconnects, Interlayer
via, Single wall carbon nanotubes, Transmission line method, Time
domain analysis", volume = "5", number = "5", pages = "661-4", }
