Abstract: A simple analytical model has been developed to
optimize biasing conditions for obtaining maximum linearity among
lattice-matched, pseudomorphic and metamorphic HEMT types as
well as enhancement and depletion HEMT modes. A nonlinear
current-voltage model has been simulated based on extracted data to
study and select the most appropriate type and mode of HEMT in
terms of a given gate-source biasing voltage within the device so as
to employ the circuit for the highest possible output current or
voltage linear swing. Simulation results can be used as a basis for the
selection of optimum gate-source biasing voltage for a given type
and mode of HEMT with regard to a circuit design. The
consequences can also be a criterion for choosing the optimum type
or mode of HEMT for a predetermined biasing condition.